GHIS080A060S-A1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	160A
Power - Max:	380W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 80A
Current - Collector Cutoff (Max):	2mA
Input Capacitance (Cies) @ Vce:	5.44nF @ 30V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227

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Introduction

The GHIS080A060S-A1 is a high power module used in power applications such as power switch and motor control applications. These modules are based on highly reliable, self-cooled, soft switching insulated-gate bipolar transistors (IGBT) technology. In this article, we will explore the application field and working principle of the GHIS080A060S-A1.

Application Field

The GHIS080A060S-A1 module is ideal for power supplies and inverters, motor drives, and other high power applications. It is designed for low voltage and high voltage operation, which allows for integration with different operating substrates.The construction of the GHIS080A060S-A1 module allows it to perform in a variety of operating environments. It can withstand high temperatures up to 150°C, high humidity levels up to 95%, and is resistant to mechanical shock and vibration.Due to its high efficiency and reliable performance, the GHIS080A060S-A1 module is commonly used in UPS systems, wind turbines, elevators, HVAC systems, and solar power systems, as well as in industrial automation and robotics.

Working Principle

The GHIS080A060S-A1 module works on the principle of insulated-gate bipolar transistors, which is a type of power semiconductor. This module is composed of an array of IGBTs and power diodes. Each IGBT has several components including a gate electrode, collector electrode, and emitter electrode, which allows for control over the current flow between the electrodes.In order for the GHIS080A060S-A1 module to operate, the gate electrode must be forward biased. This activates the device and allows the current to flow between the collector and emitter electrodes. The bipolar transistors in the module switch the on and off states at high frequency, allowing for a greater amount of power and efficiency.The insulated-gate bipolar transistor technology allows the GHIS080A060S-A1 module to operate at high switching speeds and low switching losses. This helps to reduce power losses and enables the power supply to operate at higher efficiencies.The GHIS080A060S-A1 module also features current sensing and temperature monitoring. This allows the power supply to be monitored to ensure that the output voltage and current remain in safe operating range. This helps to protect the module from over-temperature and over-current conditions.

Conclusion

The GHIS080A060S-A1 module is a highly reliable, self-cooled, soft switching insulated-gate bipolar transistor module. It is optimal for high power applications and features current sensing and temperature monitoring for added safety. The IGBTs are capable of high frequency switching and low switching losses, allowing for improved efficiency and power savings. This makes the GHIS080A060S-A1 an ideal module for all types of power requiring applications.

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