GHIS060A120S-A2 Allicdata Electronics
Allicdata Part #:

1560-1132-5-ND

Manufacturer Part#:

GHIS060A120S-A2

Price: $ 30.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: IGBT BUCK CHOP 1200V 120A SOT227
More Detail: IGBT Module Trench Field Stop Single 1200V 120A 68...
DataSheet: GHIS060A120S-A2 datasheetGHIS060A120S-A2 Datasheet/PDF
Quantity: 9
1 +: $ 27.49320
Stock 9Can Ship Immediately
$ 30.24
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 120A
Power - Max: 680W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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GHIS060A120S-A2 Application Field and Working Principle

GHIS060A120S-A2 is a new type of Insulated Gate Bipolar Transistor (IGBT) type module. IGBTs are electronics semiconductor devices that combine the high current capacity of a bipolar transistor and the high input impedance of a MOSFET. The GHIS060A120S-A2 module has several features which make it widely applicable in many fields including Electric Vehicles (EVs), renewable energy and power control systems. The most important feature setting it apart from other modules is its high input resistance. This allows it to be efficiently deployed in a wide range of applications, from solar inverters to motor drives.

The GHIS060A120S-A2 works on the principle of an insulated gate field-effect transistor (IGFET). An IGFET is a type of transistor where the gate and drain contacts are electrically isolated. This insulation allows for a much higher input resistance compared to that of a normal bipolar transistor. As a result, this type of device can pass higher currents and, in some cases, operate as a switch. When using the GHIS060A120S-A2 in a switch-mode operation, the device acts as an electronic gate that can rapidly switch the power through the module on and off.

In the field of renewable energy, the GHIS060A120S-A2 module is particularly useful in photovoltaics (PV) systems. PV systems use an array of PV cells that collect sunlight and convert it into electricity. In order to convert the DC electricity generated by the PV array into AC, an inverter is required. The GHIS060A120S-A2 module can be used as an efficient and cost-effective inverter. Additionally, it can also be used as a switch-mode charger for electric vehicles. By using the module’s high input resistance andswitch-mode operation, battery charges can be rapidly switched betweencharge states for maximum efficiency.

The GHIS060A120S-A2 module has numerous advantages over other types of transistors and semiconductor devices. Its high input resistance and switchable output makes it well-suited for applications such as solar PV inverters, electric vehicle chargers and motor controllers. Additionally, the GHIS060A120S-A2 module has high temperature endurance, making it robust and reliable. By virtue of its features, the GHIS060A120S-A2 module is poised to make a significant impact in the rapidly changing field of renewable energy and electric vehicle technologies.

The specific data is subject to PDF, and the above content is for reference

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