GKI10526 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 350µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 46W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1530pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	47.7 mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The GKI10526 is a SOT-23 single N-channel MOSFET semiconductor. It has a wide range of applications and is mainly used as a switch or gate for controlling or amplifying signals in electronic circuits.

Application Fields

The GKI10526 is widely used in the electronics industry, especially for switching and amplification of signals. In general, it is used as a switch or gate for controlling or amplifying signals in electronic circuits such as amplifiers, inverters, and logic circuits.The GKI10526 is also employed in consumer electronic appliances such as radio, television, and microwave ovens as well as in communication equipment such as smartphones and laptops. It can also be used for power switches for controlling power supplies to various electrical devices, such as computer motherboards, printers, and other digital devices.

Working Principle

The GKI10526 is a N-channel MOSFET and uses minority carrier injection to control the current flow. V GS (gate-source voltage) is applied to the gate-source junction, driving the positively charged minority carriers into the channel near the drain and creating an inversion layer. This layer is a virtual P-type material, which allows the flow of electrons to the drain and hence creates a current between source and drain.It also has a low ON resistance, which means that it needs less gate voltage in order to switch on the device; hence, the device is power-efficient. Since the drain-source voltage is very low in the ON state, it has a low voltage drop, which makes it ideal for applications that require high efficiency and low power consumption.The GKI10526 also features a low gate capacitance, high breakdown voltage, and low gate charge. With all these features, it makes it suitable for high-speed applications.

Conclusion

The GKI10526 is a single N-channel MOSFET circuit and is widely used in the electronics industry. It is mainly employed as a switch or gate for controlling or amplifying signals, especially in amplifiers, inverters, and logic circuits. It also has low gate capacitance, high breakdown voltage, and low gate charge, making it suitable for high-speed applications. Overall, the GKI10526 is a versatile and powerful semiconductor that can be used in a variety of applications.

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