Allicdata Part #: | GP10GEHE3/54-ND |
Manufacturer Part#: |
GP10GEHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | GP10GEHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP10G |
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Introduction
The GP10GEHE3/54 is a diode rectifier device. It is used in the electronics industry to convert AC power to a stable DC power output. It is a single diode rectifier, meaning it only performs one conversion task. It is commonly found in consumer electronics, power supplies, and aerospace systems.
Structure and Components
The GP10GEHE3/54 is a three-pin device. It has an anode, cathode, and a gate. The anode is the side on which the forward current flows. The cathode is the side on which the reverse current flows. The gate is the is the control voltage for the diode.
The internal structure of the GP10GEHE3/54 consists of a silicon die, which is the material from which the device is made. The die holds the three pins, anode and cathode, and the gate. It also contains a P+ layer, which acts as the n-type doping material, and an N layer, which acts as the p-type doping material.
The GP10GEHE3/54 is also encapsulated in a plastic package, which helps protect the internal components from external conditions such as humidity and dust.
Application field
The GP10GEHE3/54 is suitable for use in the rectification of AC power to DC power. It can be used in applications such as:
- Power Supplies
- Power Converters
- AC-DC Adapters
- Battery Chargers
- Uninterruptible Power Supplies
Working Principle
The working principle of the GP10GEHE3/54 is based on the PN junction diode. It operates according to the standard diode behaviour in which currents can only flow in one direction. When an AC voltage is applied to the diode, the anode side accepts the positive cycle of the AC voltage, while the cathode side accepts the negative cycle. Due to the built-in construction of the diode, the positive and negative cycles must flow in opposite directions. The diode, therefore, acts as a switch and allows current to flow in only one direction.
The resulting output is DC power, which is stable, similar to a battery. The DC power generated by the GP10GEHE3/54 is suitable for powering most consumer electronics, including laptops, tablets, and phones.
Conclusion
The GP10GEHE3/54 is a single-diode rectifier device. It is designed for use in circuits for converting AC power to a stable DC output. It is suitable for use in power supplies, uninterruptible power supplies, and many other applications. Its working principle is based on the PN junction diode, which allows current to flow in only one direction.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GP1005HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 600V 10A T... |
GP1006HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 800V 10A T... |
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GP10-4002-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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