GP1003 C0G

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io) (per Diode):	10A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 5A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	2µA @ 200V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

A GP1003 C0G diode array is a type of rectifier array that is built using a technology called Isolated Metal Substrate (IMS). The IMS process is a special process that allows the diode array to be mounted directly to a hard surface and provide better insulation and improved thermal characteristics. GP1003 C0G is a surface mount chip that is used in applications that require high performance, such as RF and microwave circuits.

Application Field

GP1003 C0G diodes are used in a variety of applications. They are most commonly used in RF and microwave applications due to their high power capabilities and excellent isolation characteristics. In RF and microwave applications, the diode array is used to create a bidirectional signal path between transmitter and receiver. This type of signal path is often used in radar systems and radio frequency tracking systems. GP1003 C0G diodes are also used in power supply systems, surge protection systems, and signal modulation systems.

Advantages

One of the biggest advantages of GP1003 C0G diodes is their high power handling capabilities. The IMS process ensures that the electrical and thermal characteristics of the diode are superior to those of standard diode arrays. This makes them ideal for high power applications. The IMS process also reduces the gap between the diode and the substrate, leading to improved insulation performance and improved thermal characteristics. The high power capability and superior thermal performance are not the only features offered by GP1003 C0G diodes. They also offer excellent isolation characteristics. This means that signals travelling through the array are isolated from one another, allowing data to be transmitted without interference. Additionally, the isolated nature of GP1003 C0G diodes makes them highly resistant to electromagnetic interference (EMI).

Working Principle

GP1003 C0G diodes work by creating an open circuit between two terminals and a short circuit between the two terminals. When a current flows through the diode, the current is automatically divisible into two branches, one in each direction. The current in the forward direction is in the form of a voltage wave, while the current in the reverse direction is in the form of a current wave. The relationship between the two branches is described by the diode’s junction voltage, which is the voltage at which the forward and reverse current flows diverge. The junction voltage of the GP1003 C0G diode is 0.3V and the maximum forward current is 0.5A. If a higher current is applied, then the diode will begin to exhibit some losses in efficiency. The diode also has a reverse leakage current of 10μA. This leakage current prevents the diode from being complete open circuit in the reverse direction.

Conclusion

GP1003 C0G diodes are a type of rectifier array that is built using the IMS process. The IMS process ensures that the electrical and thermal characteristics of the diode are significantly superior to those of other standard diode arrays. GP1003 C0G diodes are used in a variety of applications which require high power performance, including RF and microwave applications, power supply systems, surge protection systems, and signal modulation systems. The diode array works by automatically dividing a current into two branches: one in each direction. The junction voltage of the diode is 0.3V, the maximum forward current is 0.5A, and the diode has a reverse leakage current of 10μA.

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