GP10G-M3/54 Allicdata Electronics
Allicdata Part #:

GP10G-M3/54-ND

Manufacturer Part#:

GP10G-M3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 1A DO204AL
More Detail: Diode Standard 400V 1A Through Hole DO-204AL (DO-4...
DataSheet: GP10G-M3/54 datasheetGP10G-M3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes are components of semiconductor technology, used to control the conductive and charge-carrying capabilities of current flowing through them. Generally speaking, there are two main types of diodes, bipolar and unipolar. Within the broad category of diodes lie further divisions, including Schottky, Zener, and rectifier diodes. A rectifier diode is a semiconductor device used primarily to convert AC current into DC current. It is also used to convert a series of signals into a single DC signal, which is often referred to as rectification. Rectifier diodes are made up of a single N-type semiconductor layer sandwiched between two P-type semiconductor layers. A typical rectifier diode has a P-N junction at its cathode. The anode of the diode is the negative side, where charge carriers enter the device.
The GP10G-M3/54 rectifier diode is used in a wide range of applications due to its wide array of characteristics, including high current capacity, low forward voltage drop, fast response time, and wide operating temperature range. It is optimized for use in bipolar and MOS switching-power supplies and voltage-regulating circuits.

The GP10G-M3/54 rectifier diode operates on the principle of rectification. When an electrical charge passes through the diode, it flows in one direction, called a “forward-biased” current. This current passes through the diode’s P-N junction, allowing it to be rectified and travel in one direction. When a reverse-biased current is applied to the diode, it effectively creates an electric barrier, preventing current flow. This is the basis of the way a rectifier diode functions.

The GP10G-M3/54 rectifier diode is characterized by a voltage drop of 1.9 V at 5 A, a forward voltage drop of 0.8 V at 2 A, a stand-off voltage of 3.2 V, and a power dissipation of 18 W. Its reverse voltage rating is 40 V, with a reverse current rating of 75 mA. It has a thermal resistance of 20 W/C, meaning that it can safely conduct current at 20 Watts per degree Celsius. It also has a peak-forward surge current rating of 25 A. Its response time (from forward bias to reverse bias) is 105 nano-seconds.

The GP10G-M3/54 rectifier diode has a wide range of applications, including power conversion, automotive, industrial and electrical AC/DC switching power supplies, voltage regulating, and other rectifier circuit applications. Its high current capacity and fast response time make it an ideal choice for regulating voltages in current that are too large or too small. It is also used in motor control and other DC power circuits. Its fast response time also makes it an ideal choice for protection circuits, providing a fast response to current flow changes.

In addition to these uses, the GP10G-M3/54 rectifier diode is often used as a bridge rectifier, which allows AC current to pass through it while rectifying it into a DC current. This rectifier is also often used in battery charging applications, where its high current capacity and fast response time are beneficial.

In short, the GP10G-M3/54 rectifier diode is a versatile semiconductor with a wide range of applications. It is designed for use in bipolar and MOS switching-power supplies and voltage-regulating circuits, and is known for its high current capacity and fast response time. It is optimized for use in rectification and protection circuits, and can also be used as a bridge rectifier or in battery charging applications.

The specific data is subject to PDF, and the above content is for reference

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