Allicdata Part #: | GP10TE-M3/54-ND |
Manufacturer Part#: |
GP10TE-M3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURPOSE DO204AL |
More Detail: | Diode |
DataSheet: | GP10TE-M3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The GP10TE-M3/54 is a semiconductor device that belongs to the Diodes - Rectifiers - Single classification. It is a silicon rectifier diode that is designed to provide high current levels.
The device is composed of a P-type and an N-type silicon layers that are connected in a metal case. This configuration allows it to function as a power semiconductor, capable of carrying and controlling high currents. This makes it suitable for a wide range of applications in both commercial and industrial settings.
The device is designed to provide high reverse voltage protection and is capable of operating over a temperature range of -55 to +150°C. It is available in a variety of case sizes, including Surface Mount,SMT and through-hole styles. The device is equipped with an EMI filter that helps to reduce conducted emissions and is suitable for applications such as electroplating, welding, circuit protection and lighting.
The device’s working principle revolves around its two main components, which is the P-type and N-type silicon layers. When a potential difference is applied across the diode, the P-type will become more positively charged than the N-type, creating an electric field. This electric field is what helps the diode conduct currents and allows it to function as a rectifier.
The device has several benefits, including its ability to improve circuit stability and reliability. The device is also highly efficient, reducing power loss and energy consumption. Additionally, the device is designed to suppress surge currents, up to 1500A peak. This allows the device to be used in a variety of applications with minimal risk of overload.
In conclusion, the GP10TE-M3/54 is a semiconductor device belonging to the Diodes - Rectifiers - Single category. It is a silicon rectifier diode that is capable of providing high current levels and is suitable for applications such as electroplating, welding, circuit protection and lighting. Its ability to reduce power loss and energy consumption, as well as its capability to suppress surge currents, make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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GP1003HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 200V 10A T... |
GP1004HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 400V 10A T... |
GP1005HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 600V 10A T... |
GP1006HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 800V 10A T... |
GP1007HC0G | Taiwan Semic... | 0.19 $ | 1000 | DIODE ARRAY GP 10A TO220A... |
GP10-4002-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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