Allicdata Part #: | GP10W-M3/73-ND |
Manufacturer Part#: |
GP10W-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.5KV 1A DO204AL |
More Detail: | Diode Standard 1500V 1A Through Hole DO-204AL (DO-... |
DataSheet: | GP10W-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1500V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1500V |
Capacitance @ Vr, F: | 5pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes are a special type of semiconductor device that allows electricity to flow in one direction only, making them ideal to use as rectifiers in many different applications. The GP10W-M3/73 is a single rectifier diode that is specifically designed to be highly efficient, stable and reliable. This article will discuss in detail the application field of this diode and give a brief explanation of its working principle.
The GP10W-M3/73 diode is designed to be used in a variety of short-circuit and high-capacity, high-voltage applications. It is capable of blocking voltage up to 800V and can withstand a peak current of 10A, with a reverse leakage current of 1µA at an environmental temperature of 150°C. This makes it a very useful rectifier diode for applications where a high voltage and current capacity, as well as a high temperature stability, are required, such as in solar panels, inverters, power supplies, and electric vehicle applications.
The GP10W-M3/73 diode is a p-n junction diode. That is to say, it has two different regions in it that are separated by a thin layer of silicon dioxide. One of the regions is doped with phosphorus and the other is doped with boron, which creates a “barrier” across the junction. When a forward voltage is applied, the electrons and holes are able to move through the diode, allowing current to flow in one direction only.
During reverse bias, no current is allowed to flow, as there is no way for the charged carriers to move through the junction. This is what makes the GP10W-M3/73 an effective rectifier diode, making it ideal for use in applications where precise voltage values need to be maintained. In addition, it is highly efficient, providing a low forward voltage drop and minimal power dissipation.
In summary, the GP10W-M3/73 single rectifier diode is a highly efficient and reliable semiconductor device that is designed to be used in a variety of high-voltage and high-current applications. It is capable of blocking voltage up to 800V and can withstand a peak current of 10A, making it suitable for use in solar panels, inverters, power supplies, and electric vehicle applications. By understanding the application field and working principle of this diode, engineers can ensure they choose the right device for the job.
The specific data is subject to PDF, and the above content is for reference
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GP10-4003-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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