Allicdata Part #: | GP10M-E3/73GITB-ND |
Manufacturer Part#: |
GP10M-E3/73 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO204AL |
More Detail: | Diode Standard 1000V 1A Through Hole DO-204AL (DO-... |
DataSheet: | GP10M-E3/73 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05954 |
6000 +: | $ 0.05623 |
15000 +: | $ 0.05127 |
30000 +: | $ 0.04796 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP10M |
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Introduction to GP10M-E3/73
GP10M-E3/73 is a rectifier diode made of silicon, and it is classified as a single fast recovery rectifier with a peak repetitive reverse voltage of 10V and a maximum forward surge current of 3A under 75°C. The device is designed to be used in a variety of applications, including power-supply filtering, voltage rectification and battery-charging circuits.
The GP10M-E3/73 has a variety of features that make it an ideal choice for these applications: it has fast recovery times in both the forward and reverse directions, so it is suitable for full-wave rectification; it is ultra-low leakage; it is axial-leaded with a lead-frame construction for easy assembly; it has a low power dissipation; and it is excellent for high frequency operation.
Applications
The GP10M-E3/73 is a versatile device that can be used in numerous applications. Some of the applications in which it is most commonly used include:
- Power-supply filtering: The device is ideally suited for power-supply filtering applications where low reverse leakage current is desired and fast switching times are not essential.
- Voltage rectification: It can be used in full-wave, bridge, or center-tapped rectification circuits.
- Battery-charging circuits: The GP10M-E3/73 is ideal for applications in which it is important to minimize losses while charging a battery.
Working Principle
The GP10M-E3/73 is a rectifier diode that is designed to convert alternating current (AC) to direct current (DC). When an AC signal is applied to the diode, the diode conducts current in one direction, allowing the current to flow through the diode only when the voltage is greater than the threshold voltage. When the voltage is below the threshold voltage, the diode no longer conducts current and blocks it from flowing in the opposite direction.
The GP10M-E3/73 has a very low reverse-leakage current, which ensures that it works as a rectifier with minimal losses due to leakage. Furthermore, the diode has a fast recovery time in both the forward and reverse directions, which allows it to switch from direction to direction with minimal losses. This makes it an excellent choice for applications in which it is important to maintain a low power dissipation.
The device also has a low power dissipation, and is axial-leaded with a lead-frame construction for easy assembly. This makes it ideal for high frequency operations, as it is able to handle higher frequencies and still maintain a low power dissipation.
Conclusion
The GP10M-E3/73 is a silicon rectifier diode that is suitable for a variety of applications, including power-supply filtering, voltage rectification, and battery-charging circuits. It has fast recovery times in both the forward and reverse directions, as well as low reverse-leakage current, making it an excellent choice for applications in which it is important to minimize losses. It also has low power dissipation and is axial-leaded for easy assembly, making it ideal for use in high frequency operations.
The specific data is subject to PDF, and the above content is for reference
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GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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