GPA020A135MN-FD

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IGBT(Insulated Gate Bipolar Transistor) is a unique power transistor, combining the high current carrying capacity of MOSFETs with the voltage/current blocking capacity of bipolar transistors. IGBTs are usually used in medium voltage, medium to high current applications. GPA020A135MN-FD is a single IGBT with a blocking voltage of 1200V, a collector current rating of 20A, and a gate-emitter voltage rating of 10V.

The field of application of theGPA020A135MN-FDis medium voltage and high power switching applications such as motor control, power conditioning, UPS systems, AC/DC converters, and other general purpose switching applications. This IGBT is suitable for power switching applications where a defined voltage and current rating is required.

The working principle of the GPA020A135MN-FD is based on its dual construction capabilities, which acts like two semiconductor switches in one. In order to control the switching behaviour of the IGBT, one part of the device has to be controlled electrically, which is the Gate terminal. When a voltage is applied to the Gate terminal, it will create an electrical field which will activate the current-conductive path between the collector and the emitter. This ability to control current flow makes the IGBT a suitable switch for power supply and motor control applications.

As specialty components, IGBTs offer many benefits over MOSFETS and bipolar transistors. They generally have higher voltage and current ratings than MOSFETs and can handle faster switching speeds. IGBTs can also provide wide frequency range and low switching losses. Additionally they are the most popular device in HV motors and can handle multi-level control.

GPA020A135MN-FD thus offers excellent performance characteristics and is ideally suited for high voltage and current switching applications. The single IGBT design of this device is suited for high power applications and allows for more comprehensive control over current and voltage levels. In addition, its faster switching speeds, low switching losses, and wide frequency range make it an ideal choice for applications requiring intensive power management.

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