GPA040A120MN-FD Discrete Semiconductor Products

Power - Max:	480W
Supplier Device Package:	TO-3PN
Package / Case:	TO-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	200ns
Test Condition:	600V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C:	55ns/200ns
Gate Charge:	480nC
Input Type:	Standard
Switching Energy:	5.3mJ (on), 1.1mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 40A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction:

The GPA040A120MN-FD is a flush-diode, single IGBT power transistor with a voltage rating of 1200 V. It is designed to improve dynamic performance and is used in a variety of applications such as power supplies, motor control, and motor drive. This article will discuss the application field and working principle of the GPA040A120MN-FD.

Application Fields

The GPA040A120MN-FD is a suitable choice for high-efficiency applications such as power electronic converters and motor drives. It can also be used in a variety of other applications such as blinking electronic lamps, lighting, welding machines, soft starters, etc. The device is capable of withstanding high temperatures, high current, and high voltage levels, making it ideal for use in applications that require robust performance.

Working Principle

The working principle of the GPA040A120MN-FD is based on the principle of insulated gate bipolar transistors, or IGBTs. The device consists of an insulated gate, a floating electrically insulated gate, two emitter terminals and two collector terminals. When the insulated gate is forward biased, the electrons in the emitter region are drawn toward the gate, resulting in current flow from the emitter to the collector. In this way, the device operates as a switch and can be used as a capable power device.

Features

The main features of the GPA040A120MN-FD include an operating temperature range of -40 to 150 ˚C, a low turn-on voltage, a low gate charge, a fast switching speed, and a high current rating of up to 120A. The device also features an integrated diode, which provides short-circuit protection and aids in switching speed.

Conclusion

The GPA040A120MN-FD is a single-channel IGBT power transistor that offers a variety of features to improve overall performance. It is suitable for a wide range of applications, including power electronic converters, motor drives, and switch mode power supplies, among others. The device operates based on the principle of insulated gate bipolar transistors and provides robust performance, low turn-on voltage, and a fast switching speed.

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