GPA030A120I-FD Discrete Semiconductor Products

Power - Max:	329W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	450ns
Test Condition:	600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	40ns/245ns
Gate Charge:	330nC
Input Type:	Standard
Switching Energy:	4.5mJ (on), 850µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 30A
Current - Collector Pulsed (Icm):	90A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GPA030A120I-FD is a single IGBT, or Insulated Gate Bipolar Transistor, that can be used in numerous electrical applications. It is typically used in power converters, inverters, motor control systems, and high frequency switch-mode power supplies. The IGBT is an efficient switching component which enables high-power power conversion and has the advantage of a fast switching speed, improved efficiency and outstanding dynamic stability.The main component of an IGBT is a three-terminal electrical component that combines both the characteristics of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and that of a bipolar transistor. The IGBT acts as an electrical switch which can either be used to block or allow the flow of electrical current between two points. It is made up of two semiconductor layers- one of P-type material and one of N-type material- which are connected via an insulating layer called the gate oxide layer. When a voltage is applied to the IGBT\'s Gate terminal, it can greatly reduce the amount of resistive energy loss when the device is turned off.The GPA030A120I-FD is a very powerful IGBT, designed for use with higher voltages. It has a breakdown voltage of 600V with a collector current of 30A and can cope with a maximum junction temperature of 175 °C. It also features an Avalanche Ruggedness Test rating of VCE (sat) 15V. This indicates that the device can tolerate certain levels of feedback current without anything going wrong-- that is, without it entering into an avalanche breakdown.In order to operate the GPA030A120I-FD, input signals need to be applied to its Control Gate terminal. When a positive voltage is applied to the Gate terminal, a channel opening results in an electrical current passing through the IGBT. This current is then able to flow between the Collector and Emitter terminals known as the "on-state" of the device. To turn off the device the Gate voltage needs to be brought to zero, which causes the current flow to be cut off.The GPA030A120I-FD IGBT also has a number of protection mechanisms built into it to ensure that it always operates safely and within its specified parameters. This includes a temperature protection circuit which will prevent the device from rising above a certain temperature and entering into a dangerously high level. It also has a voltage protection mechanism which works by limiting the current until the voltage is brought back to a safe level. In addition, the device also contains an over-voltage protection circuit which will turn off the device if the output voltage becomes too high.The GPA030A120I-FD is a very useful IGBT for a wide range of applications and its fast switching speed, improved efficiency, and outstanding dynamic stability make it an ideal choice for many applications. Its ability to cope with high voltages and high currents makes it a reliable solution that can easily be integrated into existing designs with minimal effort. By combining the characteristics of a MOSFET and a Bipolar Transistor, the GPA030A120I-FD provides an excellent switching solution that is both efficient and safe to use.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description