GPA025A120MN-ND Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	NPT and Trench
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Current - Collector Pulsed (Icm):	75A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 25A
Power - Max:	312W
Switching Energy:	4.15mJ (on), 870µJ (off)
Input Type:	Standard
Gate Charge:	350nC
Td (on/off) @ 25°C:	57ns/240ns
Test Condition:	600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr):	480ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3
Supplier Device Package:	TO-3PN

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GPA025A120MN-ND Transistors - IGBTs - Single: Application Field and Working Principle

Introduction

The GPA025A120MN-ND is a single-channel insulated gate bipolar transistor (IGBT) from On Semiconductor. It is a discrete device usually used for high-power switching and for applications where noise suppression is required. These transistors are popular for their high speed, low on-state resistance, and fast switching speeds.

Application Field

IGBTs are used in many different industrial and consumer applications, including lighting, power supplies, motor control, industrial drives, and robotics. GPA025A120MN-ND transistors can be used in high-sensitivity applications such as telecommunications, data processing, motor control, and motor-driven systems. They are highly efficient, efficient in current carrying capacity, and fast switching speeds.Due to their low on-resistance and fast switching speed, IGBTs are widely used in a variety of switching applications such as motor-control circuits and lighting circuits. They are used in computer power supplies and switching power supplies, as well as appliance control and industrial motor control circuits.

Working Principle

An IGBT is built from four layers of semiconductor material—an n-type layer, a p-type layer, and an insulated gate electrode. The bandgap between the n-type and p-type layers allows the transistor to regulate the movement of electrons, forming a channel for the flow of current.When a positive voltage is applied to the gate terminal of the transistor, the electrons in the n-type layer are attracted to the galt electrode, thus forming a conductive path or “channel” between the emitter and the collector. This allows current to flow through the transistor.In the reverse direction, when the gate terminal is given a negative voltage, the flow of current is blocked. This is known as the “off” state, and is used to stop current flow through the device.IGBTs are typically used as switches, so they are often operated in either the “on” or “off” state, switching from one to the other at the speed of the gate signal. This way, they can be used to control current and voltage in electronic circuits.

Conclusion

The GPA025A120MN-ND IGBT transistors are used in many different industrial and consumer applications, primarily to control current and voltage in electronic circuits. They are highly efficient, fast switching, and offer high current carrying capacity. The IGBTs are typically operated in either the “on” or “off” state and switch from one to the other at the speed of the gate signal.

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