GPA042A100L-ND

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	NPT and Trench
Voltage - Collector Emitter Breakdown (Max):	1000V
Current - Collector (Ic) (Max):	60A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 60A
Power - Max:	463W
Switching Energy:	13.1mJ (on), 6.3mJ (off)
Input Type:	Standard
Gate Charge:	405nC
Td (on/off) @ 25°C:	230ns/1480ns
Test Condition:	600V, 60A, 50 Ohm, 15V
Reverse Recovery Time (trr):	465ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264

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Introduction

GPA042A100L-ND is a type of Insulated Gate Bipolar Transistors (IGBTs) device aptly denoted Single by its manufacturer, Vishay Semiconductors. This power device falls in the category of N-channel IGBTs and is specifically tailored as a power supply switch with very low on-state loss. Being primarily formed on a special environment-friendly silicon (Si) epitaxial type structure with excellent topographies, the device addresses the topics of quasi-resonant mode switching, current cutoff, and low-noise characteristics.

Functionality

IGBTs can be considered to have the combined features of both bipolar transistors and field-effect transistors (FETs). It functions essentially by using both holes and electrons as carriers of electric current -- in contrast with the traditionally used bipolar transistors which employs the charge carriers of only holes and those of FETs which employ only electrons. The operations of IGBTs comprise the combination of two distinct platforms, utilizing the high electric current carrying capacity of the bipolar transistors in the holding region, and that of the FETs in the controlling region. Through this set up, IGBTs are capable of modulating the flow of electric current between the P and N terminals of the device, thus leading to a low on-state loss for the device. GPA042A100L-ND, again, taps on this high current carrying capacity of IGBT devices and adds to it even lower on-state loss advantages. Specifically, the device offers a low total gate charge of its gate junction, thus leading to a improved switching performance characteristics.

Application field & Working principle

GPA042A100L-ND is mainly primarily used as a switch for high-power electric power applications such as photovoltaic (PV) inverters and switch-mode power supplies (SMPS). It is able to withstand relatively large electrical currents, while at the same time maintain a low on-state loss. The device, as previously mentioned, consists a P type emitter and an N type collector region. When the voltage exceeds the turn-on voltage which is about 8 to 11V, the device turns on and current begins to flow. The electric current then flows from the collector to the emitter, and the Vce(sat) voltage goes down. When the voltage is more than the Vce(sat) rating of the device, the current increases according to the saturation curve and becomes independent of the gate voltage. With the turn-on voltage greater than Vce(sat), voltage is applied to the gate which then increases the impedance of the N-channel and carries forward the current through the device.

Conclusion

While the IGBTs have been around and utilized for quite some time, the GPA042A100L-ND is a revolutionary form of Insulated Gate Bipolar Transistors device which has even lower on-state losses compared to conventional IGBTs. This device, in conclusion, can be used in many high-power electric applications such as the inverters of photovoltaics, and the switch-mode power supplies, thanks to its excellent current carrying capacityand low on-state loss.

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