GPA040A120L-ND

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An insulated gate bi-directional transistor (IGBT) is a type of transistor known for its high switch speed and relatively low power dissipation characteristics. The GPA040A120L-ND transistor, manufactured by Nihon Inter electronics Co. Ltd, is one such example. It is ideal for use in numerous applications requiring a low on-state volt-ampere (VA) rating, high speed switching and voltage isolation.

This device is also known as a “polarity switching IGBT,” designed for applications where the forward or reverse polarity can be selected. In this type of configuration, the collector-emitter reverse voltage (VBRd) is the maximum voltage that can be sustained when the device is turned off. To handle a higher reverse voltage, Nihon Inter electronics Co. Ltd offers a variety of standard and custom products.

The GPA040A120L-ND has a basic construction featuring an N-channel IGBT cell with a built-in anti-parallel diode. The diode serves to provide an alternate current path for reverse conduction, and also provides an additional protection from voltage surges. The transistor is effectively an NPN-style switch in which one side of the switch is connected to the collector, and the other side is connected to the emitter. When the gate voltage is applied, the current flows from the collector to the emitter.

The operating temperature range of the GPA040A120L-ND is from -55˚C to +175˚C, and its on-state voltage ratings range from 10V to 30V. It has a maximum current rating of 160A, and an on-state resistance of 0.03ohms. The inter-electrode breakdown voltage is 1000Vmin, with a minimum power dissipation of 800mW. In addition, the device features a safe operating area (SOA) that prevents punch-through current. This feature limits the current during overload conditions, thus preventing damage to the IGBT.

The GPA040A120L-ND can be used in a wide range of applications including motor control, robotics, uninterruptible power supply systems, frequency converters, and many more. It is also ideal for power factor correction, and can be utilized for high voltage, high power-handling applications such as solar inverters, UPS systems, and motor control, among others.

In summary, the GPA040A120L-ND is an N-channel IGBT device with a built-in anti-parallel diode for reverse current flow and surge protection. Its operating temperature range of -55˚C to +175˚C allows for deployment in a variety of industrial and commercial applications. Its low on-state resistance, high current rating and high voltage breakdown make this device particularly suitable for demanding power-handling systems.

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