GSOT04-E3-08 Circuit Protection

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TVS or transient voltage suppression devices play an important role in the protection of data lines, power sources and system components in the modern world. The GSOT04-E3-08 is a unique type of TVS diode that offer superior protection from transients.

GSOT04-E3-08 stands for Graded Series of Ultra Low (V_BR) and Low EMI Radial Leaded Transient Voltage Suppressors or Transient Voltage Spike Suppressors. It is a non-polar type of TVS diode and uses a unique diffuse J-Controlled Graded Structure (DJCS) platform. This technology provides superior protection from repeated transient events, maximises the ESD immunity of the circuit and prevents false triggering.

The application of the GSOT04-E3-08 extends to protecting from the transient effects of high voltage spikes or electrostatic discharges causing high current flows in the sensitive electronic components. The device is suitable for use in a range of high speed data applications including USB, IEEE-1394 and LCDs. It is also suitable for high speed video, audio and other applications where the use of TVS diodes offering protection from electrostatic discharges is essential.

The working principle of the GSOT04-E3-08 is based on the diffusion junction or Zener breakdown technology. The diode utilizes a J-Controlled Graded Structure (JGS) that converts the short pulse of a transient event into a relatively low current drain. The JGS enables the device to suppress a wide range of voltage transients while simultaneously providing High ESD immunity.

The GSOT04-E3-08 provides superior transient protection in applications where fast clamping is required. It is ideal for use when coping with high speed data signals as well as standard low speed data signals. The device operates with a maximum power dissipation of 600 mW at 25°C in non-repetitive pulse waveforms and has an operating temperature range of -40°C to +85°C.

In conclusion, the GSOT04-E3-08 is a specialized TVS diode device offering advanced transient voltage protection against high voltage spikes or electrostatic discharges. It features an advanced diffusion junction technology with JGS structures providing superior protection from repeated transient events and high ESD immunity. The device is suitable for use in a range of high speed data applications and offers a wide range of features and benefits.

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