GSOT05C-HE3-18

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TVS (Transient Voltage Suppressor) Diodes provide a reliable level of protection against ESD (electrostatic discharge) and voltage transients. The GSOT05C-HE3-18 is a uni-polar silicon avalanche diode which offers superior protection performance in low and medium surge current applications with ESD. This diode can be easily embedded into a range of different surfaces due to its small size and solid construction.

Application Field

The applications of the GSOT05C-HE3-18 diode are mainly in consumer electronics, semiconductor and automotive industries. The diode offers excellent over voltage protection in consumer electronic equipment, such as smartphones, tablets and gaming consoles. It is also used in automotive industries for under hood circuit protection due to its robust construction. The diode is also ideal for use in semiconductors applications due to its low capacitance and low leakage current preforming.

Working Principle

The working principle of GSOT05C-HE3-18 diode involves a transistor gate loaded with an avalanche diode. This diode has an integrated zener diode, which begins to conduct during an over voltage voltage development. When this voltage exceeds the avalanche voltage of the diode, an avalanche current is generated. The increase in current causes the zener diode to breakdown, which provides the protection current to be diverted from the transistor gate and nodes of the signal path. This protection current is then diverted to the source of the signal or to ground.

The GSOT05C-HE3-18 uses a two-stage overvoltage protection process. The first stage is the avalanche current, which helps protect the signal node from overvoltage by diverting current away from the gate and node of the signal path. The second stage is the zener diode, which breaks-down when an overvoltage greater than the breakdown voltage is encountered. This causes the current to flow directly to the source of the signal or to ground. The GSOT05C-HE3-18 has a fast response time, which helps contain the voltage. This helps reduce the risk of damage to the circuitry resulting from overvoltage events.

The GSOT05C-HE3-18 has two integral element circuits, the ESD protection circuit and the overvoltage protection. The ESD protection circuit is designed to withstand a high level of ESD. It also features a low capacitance, which helps protect high-speed data transmission from ESD. The overvoltage protection circuit provides an effective level of protection against voltage transients, such as lightning pulses or overvoltage events caused by switching surge current.

The GSOT05C-HE3-18 is a uni-polar diode which is designed to provide superior protection performance in low and medium surge current applications. It features low capacitance, low leakage current and fast response time. The diode is suitable for use in consumer electronics, automotive and semiconductor applications. The GSOT05C-HE3-18 offers two integral circuits, ESD and overvoltage protection, which provide robust protection against ESD and voltage transients.

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