GWS4618L Allicdata Electronics
Allicdata Part #:

GWS4618L-ND

Manufacturer Part#:

GWS4618L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America Inc.
Short Description: MOSFET N-CH LGA
More Detail:
DataSheet: GWS4618L datasheetGWS4618L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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The GWS4618L is a power MOSFET semiconductor (Metal-Oxide-Semiconductor Field-Effect Transistor or MOSFET) from the single category. The design and production of Power MOSFETs are different than the standard architecture and technology of MOSFETs. In essence, Power MOSFETs have a wide bandgap, a higher breakdown voltage, and a higher voltage rating per channel than other types of MOSFETs. This makes Power MOSFETs suitable for use in many different scenarios, including amplifiers, servo-motors, switching regulators, switching power supplies, power inverters, and DC-DC conversion applications.

The GWS4618L is a N-Channel enhancement-mode MOSFET. It is fabricated using a high-performance insulated-gate technology that provides reliable operation in harsh environmental conditions. The GWS4618L has a breakdown voltage of 19V, a continuous drain current of 16A, and a maximum maximum drain-source voltage of 80V.

In terms of its application field, the GWS4618L is highly versatile. It can be used in a variety of different applications, such as switching mode power supplies, motor drives, high-power amplifiers, motor speed controllers, and audio amplifiers. In many of these applications, it is necessary to combine the GWS4618L with other MOSFETs for high power ratings. Additionally, the GWS4618L has been designed to work efficiently in harsh environments and deliver consistently high performance.

As for its working principle, the GWS4618L operates by transferring electrical charge from the gate to the source and drain terminals. This action produces a funneling effect in the substrate of the MOSFET, which allows for current conduction to occur between the source and drain. The gate voltage acts as a control signal and is necessary to control the current through the MOSFET. The higher the gate voltage, the higher the current will flow. This allows for precise current control and makes the GWS4618L an ideal choice for applications where precise control is needed.

The GWS4618L can be used to control both high- and low-power applications. For high-power applications, it can be used to create switching circuits that switch large amounts of current at high voltage. For low-power applications, it can be used to create switching circuits that switch small amounts of current at low voltage. Additionally, it can be used to create level converters to convert higher voltages to lower voltages, which can be used in applications where a control signal needs to be sent over longer distances.

Overall, the GWS4618L is an ideal choice of MOSFET for a wide variety of high- and low-power semiconductor applications that require precise current control. Its widebandgap technology, high breakdown voltage, and high voltage rating per channel make it suitable for numerous applications, such as switching mode power supplies, motor drives, high-power amplifiers, motor speed controllers, and audio amplifiers. Additionally, its capability of efficiently operating in harsh environments ensures that it is ready for use in even the toughest environments.

The specific data is subject to PDF, and the above content is for reference

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