H5N2522LSTL-E

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-83
Supplier Device Package:	4-LDPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>H5N2522LSTL-E is a type of field effect transistor (FET). It is classified as a single MOSFET device. This FET is mainly used in high frequency circuit applications due to its excellent performance.</p><p>The H5N2522LSTL-E MOSFET is a three-terminal device that can be used as a switch or amplifier. The three terminals are named Drain, Gate and Source. Drain and source are connected to the load. The gate is used to control the current flow. It is a non-conductive field effect transistor that uses an oxide-semiconductor interface between the gate and the channel. This oxide layer acts as an insulating barrier and modulates the current flow.</p><p>The ability of the MOSFET to modulate current flow is based on the fact that it has a low impedance when in conducting state and hence provides low on-state resistance. This makes it highly suitable for use in modern high frequency circuit designs. The gate-to-drain capacitance of the device is also very low, which makes it ideal for high-frequency applications.</p><p>The working principle of the H5N2522LSTL-E is quite easy to understand. When a positive voltage is applied to the gate, the oxide layer between the gate and the channel is thinned out, which in turn allows current to flow from source to drain. When the gate voltage is reduced, the oxide layer thickens again, which stops the current flow. This makes the MOSFET an ideal device for use as an amplifier, as it can produce an amplified output voltage.</p><p>The H5N2522LSTL-E is used in a variety of applications ranging from audio amplifiers, high-frequency oscillators, and even x-ray imaging systems. It is also widely used in RF circuit designs and can be found in medical imaging equipment, communications systems, and even automotive applications. As this device has an exceptionally low on-state resistance, it is highly suitable for power management applications.</p><p>To summarise, the H5N2522LSTL-E is a single MOSFET device that has low on-state resistance and gate-to-drain capacitance. It is mainly used for high-frequency circuit applications, such as audio amplifiers, RF circuit designs, and even x-ray imaging systems. It has an easy to understand working principle and is perfect for power management applications due to its low on-state resistance.</p>

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