| Allicdata Part #: | H7N1002LSTL-E-ND |
| Manufacturer Part#: |
H7N1002LSTL-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 100V LDPAK |
| More Detail: | N-Channel 100V 75A (Ta) 100W (Tc) Surface Mount 4-... |
| DataSheet: |  H7N1002LSTL-E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 37.5A, 10V |
| Vgs(th) (Max) @ Id: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9700pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 100W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 4-LDPAK |
| Package / Case: | SC-83 |
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Integrated circuits (ICs) are essential devices in modern life. One of the most popular ICs, H7N1002LSTL-E, has become a staple in the production process due to its great performance and low cost. This article will explain the application field and working principle of H7N1002LSTL-E.
H7N1002LSTL-E is a single NMOSFET type power transistor. It is a low-power IC, with the typical drain current only 3mA. It is a very popular IC because of its low cost and highly efficient performance. The transistor has an operating temperature range of -55 to 125 Celsius, and the leakage current is around 1nA.
H7N1002LSTL-E has a wide range of applications due to its low power dissipation, low on-resistance, high speed switching and high gain. It is often used in applications such as switching power supplies, battery protection, motor control and automatic control systems. It can also be used in communication system circuits and amplifier circuits.
The working principles of H7N1002LSTL-E are based on MOSFETs. MOSFETs are high-speed switches that can be used to control the flow of electrons. They are also known for their low on-resistance and high gain, which make them suitable for power applications. The H7N1002LSTL-E is a three terminal device, with the gate, drain and source connections.
The gate connection is used to switch the device on. When a positive voltage is applied to the gate, a channel opens between the drain and the source, allowing electrons to flow. The voltage applied to the gate determines the width of the channel, and therefore controls the amount of current that can flow through the circuit.
The drain and source connections are used to control the voltage and current levels. The voltage applied to the drain determines the current, while the voltage applied to the source is used to regulate the reverse current. The H7N1002LSTL-E is also equipped with a breakdown voltage feature, which helps to protect the device from overvoltage.
H7N1002LSTL-E is a highly efficient and low cost device. Its wide range of applications make it the ideal choice for numerous IC projects. The working principles of MOSFET devices make it a reliable choice for power applications, and its high speed switching and high gain make it suitable for many other applications.
The specific data is subject to PDF, and the above content is for reference
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