HAT1072H-EL-E Allicdata Electronics
Allicdata Part #:

HAT1072H-EL-E-ND

Manufacturer Part#:

HAT1072H-EL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 30V 40A LFPAK
More Detail: P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPA...
DataSheet: HAT1072H-EL-E datasheetHAT1072H-EL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V
Vgs (Max): +10V, -20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The HAT1072H-EL-E is a single type of MOSFETs, or metal oxide semiconductor field-effect transistors. This type of transistor is used for the amplification of weak signals and the switching of digital current signals, and performs similar functions to other MOSFETs and FETs. In electronic circuits, MOSFETs are used to control the length of time a signal is switched on or off. This allows for better timed and more efficiently distributed signals to be sent through the circuit.

The HAT1072H-EL-E is primarily designed to handle moderately low current and low-power applications. It has low feedback resistance, high input impedance, and low biasing current, making it suitable for radio frequency amplifiers and other low-power applications where noise reduction and energy efficiency are important. It features ESD protection technology and low input capacitance, making it reliable in more difficult environments.

The working principle of the HAT1072H-EL-E is based on the fact that it is a type of field-effect transistor. In this type of circuit, the electric field affects the behavior of the charge carriers in the semiconductor material, allowing for the "on" and "off" of the transistor. This is particularly useful in amplifying or switching low-level signals, such as radio and audio frequency signals. In the HAT1072H-EL-E, a gate voltage is required to turn the device on, whereas for the off mode, the gate voltage needs to be reduced to a much lower level.

One of the most common application fields for the HAT1072H-EL-E is in audio circuitry, where it is used to control the timing of the various audio signals, and prevent interference and noise. It can also be used in radio circuitry, as a switching device, as well as in industrial and automotive applications, where it is often used to control the flow of current. Additionally, it can be used in instrument-building applications, as part of an amplifier or oscillator circuit.

The HAT1072H-EL-E is also suitable for applications where temperature control is important, as it supports operating temperature ranges of -55 to +125 degrees Celsius. It is highly reliable, with lifespans of up to 100,000 cycles, and its ESD protection ensures that it delivers consistent performance even in difficult environments. Furthermore, it is capable of handling high voltages, up to 600 volts, and can continuously handle up to 25 amps of current.

In conclusion, the HAT1072H-EL-E is a single MOSFET type of field-effect transistor. It is primarily used for audio and radio frequency amplifiers, and can also be used in instrument-building and industrial and automotive applications. Its main features include low feedback resistance, high input impedance, low biasing current, ESD protection, low input capacitance, and the ability to handle high voltages and currents. This makes the HAT1072H-EL-E an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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