HIP4080AIP

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The HIP4080AIP is a quad high-voltage, high-current P-channel MOSFET gate driver. It integrates four independent gate driver stages with built-in input protection, output saturation protection, and back-drive protection features. The HIP4080AIP is designed to minimize board area and power consumption while providing high efficiency and flexibility when driving P-channel MOSFETs. It is ideal for applications such as DC/DC buck and boost converters, point-of-load DC/DC converters, and motor control.

The HIP4080AIP operates from a single 5 V supply voltage and is capable of driving P-channel MOSFETS configured in a high-side switch configuration. The HIP4080AIP also has a low-side ground-referenced current limit function and a slew-rate limiter for each channel. Each channel has an independently-programmable current limit that can be set to a specified value using an external resistor. The slew-rate limiter is adjustable using an external capacitor, allowing the user to set the desired rise and fall times.

The HIP4080AIP features a built-in input protection circuit that prevents damage to the drivers due to overvoltage and/or overcurrent conditions. It also features output saturation protection that activates when the outputs are saturated due to excessive load currents. Finally, the HIP4080AIP also has a built-in back-drive protection feature that prevents damage caused by connecting the high-side switches directly to the low-side switch. As an additional safety feature, the HIP4080AIP also includes a thermal shutdown protection feature to protect the device from extreme temperatures.

The HIP4080AIP is designed to minimize board space and power consumption while providing high efficiency and flexibility when driving high-voltage P-channel MOSFETs. Its low-voltage operation, high output current capability, and low quiescent current make it ideal for high-current point-of-load applications. Its high-side switch control, low-side ground referential current limit, and programmable slew-rate limiter provide flexibility when driving P-channel MOSFET devices. Finally, its built-in protection features protect the device and its environment from overvoltage, overcurrent, back-drive, and thermal overload conditions.

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