HMC741ST89ETR Allicdata Electronics

HMC741ST89ETR RF/IF and RFID

Allicdata Part #:

1127-1067-2-ND

Manufacturer Part#:

HMC741ST89ETR

Price: $ 4.89
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC GAIN BLOCK AMP SOT89
More Detail: RF Amplifier IC General Purpose 50MHz ~ 3GHz SOT-8...
DataSheet: HMC741ST89ETR datasheetHMC741ST89ETR Datasheet/PDF
Quantity: 1000
1 +: $ 4.89000
10 +: $ 4.74330
100 +: $ 4.64550
1000 +: $ 4.54770
10000 +: $ 4.40100
Stock 1000Can Ship Immediately
$ 4.89
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Frequency: 50MHz ~ 3GHz
P1dB: 16dBm
Gain: 19dB
Noise Figure: 2.5dB
RF Type: General Purpose
Voltage - Supply: 5V
Current - Supply: 96mA
Test Frequency: --
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Base Part Number: HMC741
Description

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Radio frequency (RF) amplifiers are an integral part of modern wireless communication systems. They are used to amplify small signals at very high frequencies, which require a combination of linearity, power efficiency, and wide bandwidth. RF amplifiers are available in different shapes and sizes, depending on frequency, gain, power, and linearity requirements. The RF amplifiers can be classed as avalanche transistor, bipolar, field-effect transistor (FET), or hybrid. The HMC741ST89ETR is an RF amplifier with high power and linearity performance.

The HMC741ST89ETR is an RF amplifier that operates in the frequency range from 10 MHz to 4 GHz. It has a high gain of up to 35 dB and a large bandwidth of up to 6 GHz. It also features low noise performance, up to 0.7 dB, and high power efficiency, up to 72%. It is a hybrid device that combines the characteristics of both FET and bipolar transistors. This allows it to achieve high power output with low distortion and low noise performance, as well as maintaining high linearity at high power levels.

The working principle of the HMC741ST89ETR is based on the use of two transistors, one a conventional bipolar type and the other a FET. These two transistors are cross-coupled in order to maintain the linearity at high power levels. The actual amplification of the signal from the RF source is done by the bipolar transistor, while the current is passed through the FET which increases the operating gain and reduces the noise figure. The bipolar transistor is also responsible for providing the necessary voltage gain, while the FET is responsible for controlling the bias of the device.

HMC741ST89ETR has numerous applications in communications systems and instrumentation. It is ideal for use in mobile phones, GPS receivers, Wi-Fi access points, and other wireless applications that require high gain, high linearity, and low noise. Applications include baseband amplifiers, audiovisual receivers, and signal processing. It is also suitable for microwave applications, such as Doppler radar systems or digital TV receivers.

The HMC741ST89ETR provides a versatile and reliable solution for RF amplification requirements, as it is capable of providing high gain, good linearity, and low noise performance. Furthermore, its combination of FET and bipolar transistors enables it to provide high power efficiency and high gain over a wide frequency range. It is an ideal amplifier for a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference

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