HMC7357LP5GETR RF/IF and RFID |
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Allicdata Part #: | 1127-2804-2-ND |
Manufacturer Part#: |
HMC7357LP5GETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP GAAS PHEMT 2A 24QFN |
More Detail: | RF Amplifier IC VSAT, DBS 5.5GHz ~ 8.5GHz 24-SMT (... |
DataSheet: | HMC7357LP5GETR Datasheet/PDF |
Quantity: | 500 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 5.5GHz ~ 8.5GHz |
P1dB: | 34.5dBm |
Gain: | 29.5dB |
Noise Figure: | -- |
RF Type: | VSAT, DBS |
Voltage - Supply: | 8V |
Current - Supply: | 1.2A |
Test Frequency: | 5.5GHz ~ 7GHz |
Package / Case: | 24-VQFN Exposed Pad |
Supplier Device Package: | 24-SMT (5x5) |
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HMC7357LP5GETR belongs to the RF amplifiers family, which is used to amplify a small radio frequency signal. This type of amplifier is popular in wireless communication technology such as mobile phone and Wi-Fi networks. It is a high linearity low-noise amplifier that is suitable for a wide range of operating frequencies, ranging from 26 MHz to 2.5 GHz.
The HMC7357LP5GETR amplifies an input RF signal and boosts it to provide stronger transmit power. It uses a GaAs pHEMT process technology for lower input/output transmission losses. The low noise figure is 4dB, which is better than many other types of amplifiers. There is also a high IP3 performance of +40dBm, making it suitable for use in systems with demanding performance requirements.
A good application example for the HMC7357LP5GETR is in a mobile phone repeater tower. The repeater tower amplifies and sends out the signal from a base station to distant cell phones. In this application, the amplifier needs to provide low noise performance for high bit rates of digital communication and a large input/output signal bandwidth. The HMC7357LP5GETR is well-suited for this application because it has a wide operating frequency range, low noise figure, and excellent IP3 performance.
The basic working principle of the HMC7357LP5GETR is relatively simple. It utilizes a high power transistor to amplify a small RF signal. The input is provided to the gate of the transistor and the amplified output is obtained from the source. A bias circuit is used to provide the current required for the amplification process. The transistor is also surrounded by a feedback circuit for enhanced linearity and reduced distortion.
In conclusion, the HMC7357LP5GETR is a type of RF amplifier that is suitable for powering high bit rate digital communication systems. It has a low noise performance and wide operating frequency range, making it well-suited for mobile phone repeaters and other demanding applications. The basic working principle is based on a high power transistor and a feedback circuit.
The specific data is subject to PDF, and the above content is for reference
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