HMC7950LS6 RF/IF and RFID

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RF power amplifiers are integral components for a wide range of applications. The HMC7950LS6 is a high power, high gain RF amplifier, especially suited for applications in wireless infrastructure, land mobile radios, and test instrumentation. This powerful amplifier boasts power levels from 7 Watts to 50 Watts, making it an ideal choice for a range of challenging applications.

General Overview

The HMC7950LS6 is a highly efficient, high power amplifier operating in the 700 to 2500 MHz frequency range. With an impressive output power ranging from 7 to 50 watts, this amplifier offers excellent performance and power efficiency. The amplifier also features a 1dB compression point of +27dBm with a low total harmonic products of -60dbC. In addition, the amplifier\'s gain stage is optimized for linear operation, allowing it to produce excellent linearity over a wide range of output powers.

Features and Benefits

The HMC7950LS6 has several features that set it apart from other amplifiers. These features and their associated benefits include:

• High Output Power: The HMC7950LS6 has a maximum output power of 50 watts, making it an ideal choice for applications requiring high power output.
• High Efficiency: The HMC7950LS6 has an efficiency of 60%, meaning it can produce more output power for less power input.
• Wide Frequency Range: The amplifier operates from 700 to 2500 MHz, making it suited for a variety of applications.
• Low Distortion and Harmonic Products: The amplifier has a 1dB compression point of +27dBm and a total harmonic product of -60dBc, meaning it can produce clean and undistorted signals.
• Operates at Low Temperature: The amplifier\'s dielectric heating elements are designed to operate in temperatures as low as -40°C.

Applications

The HMC7950LS6 is an ideal amplifier for a wide range of applications. In particular, this amplifier is well-suited for wireless infrastructure, land mobile radios, and test instrumentation. It is also ideal for high power, high gain, and high linearity applications.

Working Principle

The HMC7950LS6 operates on a four-stage cascode architecture. The first stage is an input stage and is comprised of a pair of differential amplifiers that provide high input impedance and high gain. The second stage is the driver stage, and it employs two cascoded NPN transistors for current gain. The third stage is the output stage, and it employs two cascoded NPN transistors for voltage gain. The fourth and final stage is the protection stage, which is used to protect the amplifier from damage due to thermal runaway, over-voltage, and RF load mismatch.

The amplifiers circuitry is designed with power transistors that provide low thermal resistance. The amplifier employs two power FETs in a totem pole configuration to provide up to 50W of output power with a total gain of 38dB. The amplifier is also equipped with a high output power synchronous current feedback system (SFCB) that provides excellent linearity and low distortion.

Conclusion

The HMC7950LS6 is a powerful and highly efficient RF amplifier, well-suited for a variety of applications ranging from wireless infrastructure to land mobile radios. This amplifier is capable of up to 50W of output power with an impressive 60% efficiency. Additionally, the amplifier offers excellent linearity, low distortion, and is designed to operate in extreme temperatures down to -40°C. As such, the HMC7950LS6 is an excellent choice for those looking for a high power, high gain, and high linearity RF amplifier.

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