HN1B01F-GR(TE85L,F Allicdata Electronics

HN1B01F-GR(TE85L,F Discrete Semiconductor Products

Allicdata Part #:

HN1B01F-GR(TE85LFCT-ND

Manufacturer Part#:

HN1B01F-GR(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP 50V 0.15A SM6
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA ...
DataSheet: HN1B01F-GR(TE85L,F datasheetHN1B01F-GR(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 120MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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HN1B01F-GR (TE85L,F) is a type of transistor array that belongs to a category known as bipolar junction transistors (BJT). This type of transistor is composed of multiple active regions that are connected and isolated from one another. The active regions can be connected in series or parallel, allowing the users to create unusual configurations and varying levels of gain. Furthermore, the transistor array can be programmed to provide an improved range of performance, by combining multiple transistors together and with each other.

In terms of application, the HN1B01F-GR series of transistors are primarily used in analog signal processing, in both linear and non-linear applications. Examples of linear applications include signal amplification, filtering, and switching, while non-linear applications include signal detection, feedback control, and synchronization. Because of their multiple active elements and great signal amplification, these transistors are perfect for such applications.

The working principle of the HN1B01F-GR series is fairly straightforward. Each active region of the transistor array consists of a number of connected or isolated transistor elements. When a voltage or current signal is applied to the array, the transistors undergo forward biased and reverse biased. During forward biasing, a current flows from the collector region to the emitter region, allowing the output current to increase. On the other hand, during reverse biasing, a current flows from the base region to the emitter region, allowing the current at the output to decrease. Depending on the configuration, the output current can be varied, allowing the user to achieve a desired level of signal amplification.

The main advantage of the HN1B01F-GR series of transistor arrays is their excellent signal processing capabilities. By combining multiple active elements, the users can create customized signals, and also reduce signal noise. Furthermore, the programming capabilities allow the user to selectively adjust the gain, making these transistors an excellent choice for applications that require precise levels of signal amplification. In addition, their low cost and robust performance make them one of the most popular transistor arrays available today.

In conclusion, the HN1B01F-GR series is an excellent choice for any application that requires precise levels of signal processing. Not only do these transistors have great signal amplification capabilities, but they also offer a wide range of programming options that make them perfect for designing customized signals or reducing noise. Their low cost and robust performances make them one of the most popular transistors available today, and they are sure to remain so in the years to come.

The specific data is subject to PDF, and the above content is for reference

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