HN1B04FE-Y,LF Discrete Semiconductor Products |
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Allicdata Part #: | HN1B04FE-YLFTR-ND |
Manufacturer Part#: |
HN1B04FE-Y,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP 50V 0.15A ES6 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA ... |
DataSheet: | HN1B04FE-Y,LF Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.03347 |
8000 +: | $ 0.02911 |
12000 +: | $ 0.02474 |
28000 +: | $ 0.02328 |
100000 +: | $ 0.01940 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The HN1B04FE-Y,LF is a type of bipolar junction transistor (BJT) array. It is a six-pin device, consisting of 4 NPN transistors in a single package with a common emitter. This type of transistor array has a variety of uses and applications in different areas of engineering and electronics.
A BJT array can be used in general purpose applications such as amplifiers and switches. In addition, it can also be used in more specialized devices such as computer logic circuits and level shifters. BJT arrays are also commonly used in motor control circuits, LED drivers, and other power control applications.
The HN1B04FE-Y,LF is a type of monolithic Bipolar transistor array. It has a maximum collector current of 1.0A and its operating temperature range is between -55°C to 150°C. The package size is 7.62mm x 6.35mm, and it has a maximum collector-emitter voltage of 50V. The device also has a variety of other features such as a low on-resistance of 5 ohm and a junction-to-ambient thermal resistance of 108°C/W.
The working principle of the HN1B04FE-Y,LF is based on the operation of a conventional BJT. The device consists of a base, an emitter and a collector, with a current flowing through the base controlling the amount of current flowing from the collector to the emitter. The base current is usually provided by an external power source and is used to control the amount of collector current. This type of device is also known as a current source or current regulator.
The HN1B04FE-Y,LF can be used in a variety of different applications. It is a highly efficient device and can be used in high-frequency circuits due to its low on-resistance. It is also suitable for controlling large currents, as it can provide a constant output current even with large changes in the input voltage. Additionally, the device can be used in power control applications due to its low junction-to-ambient thermal resistance.
The HN1B04FE-Y,LF is a highly efficient and versatile device. It can be used in a variety of applications due to its low on-resistance, its ability to control large currents, and its low junction-to-ambient thermal resistance. This type of device is a great choice for those looking for a reliable and efficient transistor array.
The specific data is subject to PDF, and the above content is for reference
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