HN1B01FU-GR,LF Discrete Semiconductor Products |
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Allicdata Part #: | HN1B01FU-GRLFTR-ND |
Manufacturer Part#: |
HN1B01FU-GR,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP 50V 0.15A US6-PLN |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA ... |
DataSheet: | HN1B01FU-GR,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03804 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 200mW, 210mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The HN1B01FU-GR,LF application field and working principle belong to the Transistors - Bipolar (BJT) - Arrays category. This type of transistor consists of multiple transistors enclosed in a single package.
A BJT array is a simple circuit device that consists of several or a small number of bipolar transistors wired together and generally packaged in a single housing. Each transistor has its own characteristics, giving it different operating characteristics based on the application. This allows the BJT array to be used in a wide range of applications, from signal and power handling tasks to analog and digital signal processing.
The HN1B01FU-GR,LF application field and working principle are based on the characteristics of the transistor array. This device is capable of handling large amounts of power and it also has a very high speed response, making it suitable for a variety of applications. It can also be used in high temperature environments, making it ideal for applications where heat management is necessary. Its ability to accept a wide range of input voltage makes it suitable for power supplies, switching circuits, and other high-power applications.
In order to understand the workings of the HN1B01FU-GR,LF application field and working principle, we must first understand the basic principles of bipolar transistors. A bipolar transistor is basically composed of two transistors that are linked together by a common base. The two transistors usually have opposite polarity, meaning that one is positive and the other negative. The base voltage is typically set and the transistor behaves like a three-terminal device. The base terminal is where current flows in and out whereas the emitter is where the current begins and ends. When current flows in the base terminal, it is referred to as the forward direction, and when it flows out the reverse direction is applied.
When we connect the two transistors in the HN1B01FU-GR,LF application field and working principle, we can see how the device works and how it can be used in different applications. First, the array can be used as a rectifier, meaning that it can rectify an AC signal. This means that it can convert an AC signal into a DC signal that can be used in various applications. It can also be used as a current amplifier, meaning that it can be used to increase the current that flows through a component. Finally, it can be used as a voltage regulator, meaning that it can regulate the voltage of a component, either increasing or decreasing it.
The HN1B01FU-GR,LF application field and working principle are based on a combination of transistors and array configuration. This allows it to have a wide range of applications, from DC-DC conversion to power Management systems. Its ability to handle high current make it ideal for a variety of applications that require a high degree of accuracy. When paired with the right components, it can easily address the needs of a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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