Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V
Power - Max:	100mW
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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HN1B04FE-GR,LF Application Field and Working Principle

Transistors - Bipolar (BJT) - Arrays

The HN1B04FE-GR,LF is a type of transistor array integrated circuit (IC) produced by NXP Semiconductor company. It consists of two NPN and two PNP transistors as well as two Schottky diodes, which are all connected in a monolithic structure. The HN1B04FE-GR,LF is a low voltage, low power, and high reliability IC ideal for industrial applications, such as controlling low voltage motors and relays. It has a maximum collector-emitter voltage of 30 V and a maximum power dissipation rating of 500 mW. The HN1B04FE-GR,LF is a Bipolar-Junction Transistor (BJT) array that utilizes a natural design to simultaneously switch current on multiple paths. It is essentially a single package that contains two NPN transistors, two PNP transistors, and two Schottky diodes all arranged in a custom configuration. Each transistor element is fabricated, then matched and tested in a single process and packaged together in the form of a DIP or small-outline IC. The HN1B04FE-GR,LF uses advanced IC fabrication technology to reduce the number of process steps and increase IC reliability. The two transistors present in the HN1B04FE-GR,LF package can be commonly coupled to form a Darlington configuration. This configuration enables high gain and low switching threshold. It also reduces the power dissipation while providing a more reliable connection. The Schottky diodes present in the package act as high-speed switches and provide increased heat resistance in applications that require quick on/off switching. Additionally, these high-speed switches help reduce the overall power consumption during switching operations. The combination of transistors and diodes enables the HN1B04FE-GR,LF to perform effectively in a wide range of applications. It can be used in various power management applications such as in motor control circuits, relay control circuits, and other industrial applications. Moreover, it is also well suited for switching applications like AC-DC power converters, DC-DC converters, or voltage regulators. The HN1B04FE-GR,LF is a versatile device that provides many advantages to industrial applications. It is an easy-to-implement solution for low voltage motor and relay control. Its high reliability and low power dissipation ratings make it a suitable choice for industrial applications. Additionally, its performance and miniature size enable it to be used in compact designs with enough power to meet the requirements of many industrial projects.

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