HN1B01FU-Y(L,F,T) Discrete Semiconductor Products |
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Allicdata Part #: | HN1B01FU-Y(LFT)TR-ND |
Manufacturer Part#: |
HN1B01FU-Y(L,F,T) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP 50V 0.15A US6 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA ... |
DataSheet: | HN1B01FU-Y(L,F,T) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
Description
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HN1B01FU-Y(L,F,T) is a type of transistor commonly used in electronics. The transistor is classified as a Bipolar Junction Transistor (BJT) array, where subsets of multiple transistors are arranged together to produce desired outcomes. These transistors have three pins which are designated as the L, F, and T terminals. This particular set of transistors is used for the purpose of amplifying and switching electrical signals, as well as for providing specific logic functions.The function of the L terminal is to serve as the emitter of the transistor. This terminal takes in electrons and then collects them to a single point. The collected electrons then pass through to the F and T terminals. The F terminal is used to collect current from the electrons as they flow through the transistor. This current can then be amplified and used to produce the desired outcomes. The T terminal serves as the base of the transistor and is used to control the flow of the electrons. Line voltage is applied to the T terminal in order to adjust the voltage levels, allowing the electrons to be either blocked or allowed through the transistor.In terms of uses for the transistors, it can be used for numerous electrical applications. For example, it can be used for amplifying low level signals as well as supplying clean and reliable power supplies. The transistors are also ideal for use in AC power supplies, such as those used for powering computers and other electronic appliances. It can also be used for RF signal amplification in order to increase the power or range of a signal. The transistors typically have a working voltage of up to 40 volts and operate at temperatures ranging from -65°C to +125°C. They also have a low power supply current of 1µA and a maximum power dissipation of 1W. The transistors are available in both through-hole and surface-mount packages, allowing them to be used in both traditional and more advanced electronic designs.In terms of working principles, the transistors operate on the principle of minority carrier injection. In this principle, a small current is injected into the transistor and then held in place using voltage. This voltage is then either increased or decreased to adjust the amount of current which passes through the transistor. Since the current is only held in place using a small amount of power, it is considered to be extremely efficient.The HN1B01FU-Y(L,F,T) transistors are a versatile and reliable type of transistor, making them ideal for use in various electronics applications. Their ability to amplify and switch low level signals with low power consumption, as well as their resistance to extreme temperatures makes them perfect for a wide range of applications. By using these transistors, users can expect reliable performance and consistent output levels.The specific data is subject to PDF, and the above content is for reference
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