HN4K03JUTE85LF Allicdata Electronics

HN4K03JUTE85LF Discrete Semiconductor Products

Allicdata Part #:

HN4K03JUTE85LFTR-ND

Manufacturer Part#:

HN4K03JUTE85LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 20V 0.1A USV
More Detail: N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: HN4K03JUTE85LF datasheetHN4K03JUTE85LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Vgs (Max): 10V
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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HN4K03JUTE85LF is an advanced semiconductor device that falls into the field of transistors, FETs and MOSFETs that are single. The device offers several advantages over standard transistors and logic devices. The device also offers significant power savings and enhanced performance in areas such as high frequency switching.HN4K03JUTE85LF has a relatively simple structure for an advanced semiconductor device. It consists of three main parts, including the source, drain and gate. The source and drain are connected to a voltage source, while the gate is essentially an electrically insulated channel between the two. This configuration allows for current to flow between the source and the drain when an appropriate voltage is applied to the gate. This type of transistor is essentially a voltage controlled switch, meaning that the current flow through the device is controlled by the gate voltage.In practical terms, the HN4K03JUTE85LF device can be used to control a load with a large amount of current and voltage, while consuming a minimal amount of power. This makes it particularly useful in applications such as motor control, high frequency switching and other power amplifiers. It also makes the device useful in areas such as data communication and power management.The HN4K03JUTE85LF has some unique features that make it stand out from other transistors. First, it uses a higher current density than other transistors, making it more efficient. It is also relatively tolerant to wide variations in temperature, making it more reliable, especially in harsh conditions. Finally, the device features an exceptionally low on-resistance, meaning that it can handle higher voltages to accomplish more efficient switching.In addition to its voltage-controlled switching capability, the HN4K03JUTE85LF has several other features that make it particularly useful. It is a fast switching device, with switching speeds of up to 50 volts per nanosecond. This could make it a particularly useful device in applications that require high speed switching. It is also capable of providing up to 400 volts of drain-source voltage, meaning it can be used to control much higher power loads.Overall, the HN4K03JUTE85LF is a powerful and versatile device, designed to meet the needs of complex applications. It can be used to provide high power switching capabilities, while being relatively low power. The device is an excellent choice for applications requiring advanced switching, while still being efficient and reliable.

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