Allicdata Part #: | HRF3205-ND |
Manufacturer Part#: |
HRF3205 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 100A TO-220AB |
More Detail: | N-Channel 55V 100A (Tc) 175W (Tc) Through Hole TO-... |
DataSheet: | HRF3205 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 175W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 59A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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HRF3205 is a type of Field Effect Transistor (FET) that is used in a variety of electronic components, such as power supplies, audio amplifiers, and optical pick-ups. FETs are a type of transistor commonly used to amplify and switch electrical signals. They are often used in applications where higher switching speed is required. HRF3205 is a single-gate FET and has no need for additional components such as gates, static loads, and capacitors.
Field Effect Transistor (FET) is an active electronic component that can conduct current between two terminals when a third terminal is given a signal. FETs rely on an electric field produced between the drain and source terminals that can vary a channel between them depending on the voltage applied on the gate.
HRF3205 has a large gate thickness of 200 s which makes it suitable for high voltage applications. Its drain-source breakdown voltage (BVDSS) is 32V, and its maximum drain current (ID) is 4A. Its output capacitance is low, making it well-suited for use in switching applications where low access and gate times are necessary.
The HRF3205 has a Gate-Source Threshold Voltage of about 3V, with other typical values ranging from 2.5V to 3.2V. This indicates the minimum voltage that needs to be applied to the gate before an FET can conduct. This is one of the main specifications that need to be taken into account when designing with an FET. It is also important to ensure that the gate voltage is not greater than the drain-source breakdown voltage, otherwise the device may be destroyed.
When designing with any FET, it is important to ensure that the conditions of the FET and the circuit will be sufficient to produce the desired results. This includes designing for proper voltage and current levels, and ensuring the system can handle transient conditions. Also, attention should be given to ensuring the temperature and other environmental conditions in which the FET will operate do not cause it to fail.
In summary, the HRF3205 is a single-gate FET that is suitable for a variety of applications, such as power supplies, audio amplifiers, and optical pick-ups. It has a large gate thickness and low output capacitance, making it well-suited for switching applications where low access and gate times are necessary. It is important to ensure that the conditions of the FET and the circuit will be sufficient to produce the desired result and to handle transient conditions.
The specific data is subject to PDF, and the above content is for reference
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