HRFZ44N Allicdata Electronics
Allicdata Part #:

HRFZ44N-ND

Manufacturer Part#:

HRFZ44N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 49A TO-220AB
More Detail: N-Channel 55V 49A (Tc) 120W (Tc) Through Hole TO-2...
DataSheet: HRFZ44N datasheetHRFZ44N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The HRFZ44N is a vertical N-channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) that is widely used in various applications, including switching, amplifier and acoustic transducers. It is a single device, meaning that it has one gate, drain and source.

The HRFZ44N has a drain-source voltage VDS of 60 Volts (V), a maximum drain current ID of 0.2 Ampere (A), and a gate-source voltage VGSS of -30 V. Its gate-source threshold voltage is maximum 7 V. In addition, its maximum power dissipation rating is 0.9 Watts (W).

The HRFZ44N is an enhancement mode FET. This means that the gate-source voltage must be positive in order to make current flow through the drain and the source. In this way, the FET amplifies the weak input current. Furthermore, it offers low ON-state resistance and low gate-source threshold voltage, which helps to switch the transistor quickly and accurately.

The HRFZ44N’s metal-oxide gate insulation allows it to be placed directly on top of metal surfaces and still remain insulated. This makes it suitable for use in high-temperature environments without fear of damage due to temperature. It also has excellent temperature stability, making it ideal for use in temperature-sensitive applications.

The HRFZ44N is an ideal choice for applications that require simple control and large current capacity. It can be used as an amplifier, where the device is used to amplify an input signal. It can also be used as a switch, where the device is used to control the flow of current through a circuit. In addition, it is often used in acoustic transducers, where the device is used to convert an electrical signal into sound.

The HRFZ44N has many advantages over other MOSFETs. It has a low voltage rating and an efficient gate-source threshold voltage, which in turn leads to a low ON-state resistance. It also offers very low power dissipation, making it an excellent choice for use in low-power applications. In addition, its metal-oxide gate insulation allows it to be placed directly on metal surfaces, further increasing its versatility.

In conclusion, the HRFZ44N is a powerful and versatile MOSFET that can be used in a variety of applications. Its low voltage rating, efficient gate-source threshold voltage, low ON-state resistance, and metal-oxide gate insulation make it an ideal choice for use in a variety of high-temperature, low-power and temperature-sensitive applications. It is one of the most popular MOSFETs on the market and is widely used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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