| Allicdata Part #: | HSMP-3880-BLKG-ND |
| Manufacturer Part#: |
HSMP-3880-BLKG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Broadcom Limited |
| Short Description: | DIODE PIN SWITCH 100V SOT-23 |
| More Detail: | RF Diode PIN - Single 100V 1A 250mW SOT-23-3 |
| DataSheet: |  HSMP-3880-BLKG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | PIN - Single |
| Voltage - Peak Reverse (Max): | 100V |
| Current - Max: | 1A |
| Capacitance @ Vr, F: | 0.3pF @ 50V, 100MHz |
| Resistance @ If, F: | 3.8 Ohm @ 1mA, 100MHz |
| Power Dissipation (Max): | 250mW |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | HSMP-3880 |
Description
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.HSMP-3880-BLKG is a type of RF diode, commonly used for radio frequency (RF) applications such as amplifiers, mixers, detectors, and switches. It is a junction-gate FET (JFET) diode with a cutoff frequency of 60 GHz. The diode has an extremely low capacitance which, along with its low noise levels and high linearity, make it ideal for use in high-performance, reliable RF applications.The HSMP-3880-BLKG is a P-channel JFET that is constructed with N-type substrate material and molysilicide Schottky contacts. It utilizes a vertical structure with a large surface area to lower the capacitance. This diode has an extended operational temperature range of -55°C to 150°C and is easily mounted with standard surface-mount devices (SMD).The HSMP-3880-BLKG diode is optimized for applications such as general RF, radar, and VSAT applications. It has a low capacitance and high linearity, making it ideal for use in high-performance, low noise, and reliable RF applications. The diode’s small-signal transconductance is high and it’s reverse current leakage is very low, making it suitable for use in a wide range of applications.When the HSMP-3880-BLKG diode is used for RF applications, the highest gain can be achieved by operating the device at its voltage, current, and noise optimum points. At its optimal bias (VDS= 6V, ID= 90mA, and VG= 0V), the diode has a gain of 6 dB at 1GHz and a low noise figure of 2dB. The device’s frequency response is flat with a 3dB bandwidth of 12GHz, making it suitable for use in wide band applications.The HSMP-3880-BLKG diode is also well suited for use in RF amplifier, RF mixer, and RF frequency conversion applications. This diode has an excellent linearity at all bias currents, making it ideal for use in applications that require high power-added efficiency and low distortion. The diode’s high linearity, wide operating temperature range, low capacitance, and low noise level make it especially suitable for high-performance and reliable RF applications.The HSMP-3880-BLKG diode is widely used for RF applications, such as amplifiers, mixers, detectors, and switches. It is easily mounted with standard surface-mount devices, has an extended operational temperature range of -55°C to 150°C, and features a low capacitance, high linearity, high transconductance, and low noise level. With these features, it is an ideal choice for applications where high performance and reliability is a must.
The specific data is subject to PDF, and the above content is for reference
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