Allicdata Part #: | HSMP-3834-TR2G-ND |
Manufacturer Part#: |
HSMP-3834-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GP 200V SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 200V 1A 250mW... |
DataSheet: | HSMP-3834-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 200V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.3pF @ 50V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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HSMP-3834-TR2G Application Field and Working Principle
HSMP-3834-TR2G is a three-terminal positive Schottky barrier diodes (SBD). It represents a type of diode, with a varying application field depending on the operating frequency or current, and a specific working principle based on its construction.
In terms of its application field, the HSMP-3834-TR2G is typically used for RF signal detection in transceivers, frequency converters, and microwave transmitters. It is also used as a general diode to switch power in low-noise, low-power circuits, where current gain and distortion are minimized. As a result, it is suitable for many electronic devices such as cellular phones, laptop computers, and gaming systems.
The HSMP-3834-TR2G has a working principle which is based on the formation of a Schottky barrier, the tunnelling barrier, and the internal reverse breakdown voltage of the diode. The Schottky barrier is formed when a positively charged metal is placed in contact with a negatively doped semiconductor. This barrier creates a potential barrier, meaning electrons cannot pass through it and the current will only flow in a one-way direction, form the anode to the cathode. The tunnelling barrier, meanwhile, is formed when the applied voltage reduces the potential barrier, allowing electrons to pass through it without causing ionization.
The internal reverse breakdown voltage of the HSMP-3834-TR2G is the voltage at which the current rapidly increases beyond a certain value. This occurs when there is a large potential barrier between the anode and cathode, preventing the current from further increasing. The reverse breakdown voltage will be higher for higher reverse current values.
In summary, the HSMP-3834-TR2G is a three-terminal positive Schottky barrier diode, with applications in signal detection, frequency conversion and low-noise, low-power switching. Its working principle is based on the formation of a Schottky barrier, the tunnelling barrier, and the internal reverse breakdown voltage of the diode.
The specific data is subject to PDF, and the above content is for reference
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