Allicdata Part #: | HSMP-386E-TR2G-ND |
Manufacturer Part#: |
HSMP-386E-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GP 50V LO COST SOT-323 |
More Detail: | RF Diode PIN - 1 Pair Common Anode 50V 1A SOT-323 |
DataSheet: | HSMP-386E-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Common Anode |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.2pF @ 50V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 100mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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RF diodes are commonly used in electronics devices, and the HSMP-386E-TR2G is a type of RF diode found in many electronics devices. The HSMP-386E-TR2G is a high-speed Schottky barrier diode, which combines higher frequency operability and low capacitance with a small package size. It is one of the most commonly used types of RF diodes due to its flexibility and versatility.
The HSMP-386E-TR2G is designed to be used in RF mixer and RF amplifier applications, and is highly efficient at providing small signal handling and improved intermodulation performance. The diode generally operates in the frequency range of 0.4 - 5 GHz, making it an ideal solution for many of today\'s high-speed applications. It also features a low junction capacitance of 0.67 pF and a high speed switching characteristic.
The applications of the HSMP-386E-TR2G include wireless radio transceivers, digital radio modems, point-to-point radio links, and other telecom applications. It is also extensively used in RF signal processing and modulation applications, such as power amplifiers, direct modulation receivers, phase modulators, and harmonic reject filters. The HSMP-386E-TR2G is also used in antennas and antennas arrays, where it is used as a Schottky mixer.
The working principle of the HSMP-386E-TR2G makes use of a Schottky barrier, which is basically a junction between a metal and a semiconductor. The Schottky barrier functions as a gate-like device, allowing only electrons to flow from one side to the other, depending on the voltage applied to the diode. When a voltage is applied to the diode, it causes a junction capacitance to form, which creates a parasitic capacitance effect. This capacitance permits a high frequency signal to pass from one side of the diode to the other, which is how the diode processes and amplifies incoming RF signals.
In addition, the Schottky diode also serves as an amplifier because it is able to increase the output current of an incoming RF signal. This can be accomplished by increasing the voltage across the diode’s junction and reducing the capacitance, which increases the output current. The net effect of this is an increase in the gain of the amplified signal.
Overall, the HSMP-386E-TR2G is a versatile RF diode that is used in a variety of RF applications. It is highly efficient at providing small signal handling and improved intermodulation performance, making it an ideal solution for many of today\'s high-speed applications. The diode has a wide range of applications, including wireless radio transceivers, digital radio modems, point-to-point radio links, antennas and antennas arrays, power amplifiers, and direct modulation receivers, among others.
The specific data is subject to PDF, and the above content is for reference
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