IHW20N120R3FKSA1

Series:	TrenchStop®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	40A
Current - Collector Pulsed (Icm):	60A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 20A
Power - Max:	310W
Switching Energy:	950µJ (off)
Input Type:	Standard
Gate Charge:	211nC
Td (on/off) @ 25°C:	-/387ns
Test Condition:	600V, 20A, 15 Ohm, 15V
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IHW20N120R3FKSA1 Application Field and Working Principle

IHW20N120R3FKSA1

IHW20N120R3FKSA1 stands for International rectifier high voltage insulation type IGBT, which is a member of the IGBT family offered by Infineon. It is a high voltage, insulated gate bipolar transistor, which is designed for high switching frequency applications. It is available in both SIP and DIP packages with a wide input voltage range from 12 V to 800 V.

Application Field

The IHW20N120R3FKSA1 is used in various applications, such as electric motors, switching power supplies, inverters, and high-efficiency power converters. It is ideal for power electronics, but can also be used in automotive, lighting, and solar energy applications.

Working Principle

The device features a field insulated gate structure, which is designed for fast and efficient switching. The gate voltage and source voltage are insulated from each other, allowing for more efficient and reliable switching. The device can handle high currents and higher frequencies for improved power switching performance.In switching applications, the device is turned on and off by a voltage control signal. When the signal is high, the device is on, allowing conduction of current between the collector and the emitter. When the signal is low, the device is off, preventing current to flow.The device also has a temperature protection feature, which helps protect it from any thermal runaway or damage due to a high ambient temperature. This feature makes it suitable for use in temperature-sensitive applications.

Conclusion

The IHW20N120R3FKSA1 is a high voltage, insulated gate bipolar transistor (IGBT) designed for power electronics applications. It is available in both SIP and DIP packages, and is used in electric motors, switching power supplies, inverters, and power converters. The device can handle high currents and higher frequencies for improved power switching performance. It also features a temperature protection feature, which helps protect it from any thermal runaway or damage due to a high ambient temperature.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description