IHW20N135R5XKSA1 Allicdata Electronics
Allicdata Part #:

IHW20N135R5XKSA1-ND

Manufacturer Part#:

IHW20N135R5XKSA1

Price: $ 2.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1350V 40A 288W TO247
More Detail: IGBT 1350V 40A 288W Through Hole PG-TO247-3
DataSheet: IHW20N135R5XKSA1 datasheetIHW20N135R5XKSA1 Datasheet/PDF
Quantity: 70
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.43180
10 +: $ 2.18610
100 +: $ 1.79090
500 +: $ 1.52459
1000 +: $ 1.28580
Stock 70Can Ship Immediately
$ 2.68
Specifications
Power - Max: 288W
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/235ns
Gate Charge: 170nC
Input Type: Standard
Switching Energy: 950µJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1350V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IHW20N135R5XKSA1 transistor is a type of insulated-gate bipolar transistor (IGBT) designed for power switching applications. It combines the high power density of a lateral MOSFET with the fast switching speed of bipolar transistors, making it an ideal solution for a wide range of power-switching requirements. IHW20N135R5XKSA1 are typically used in home appliances, industrial machinery, and power electronics, as well as many other power management applications.

The IHW20N135R5XKSA1 transistor features a 600V collector-emitter voltage rating, an operating temperature range of -40° to 125°C, and a low on-resistance of 20mΩ. It also has an on-chip integration of an anti-parallel freewheeling diode and gate resistor, making it a very reliable power switching solution. Furthermore, it boasts a high junction temperature of 150°C and a fast-switching speed of 350V/ns. This makes the transistor ideal for use in power electronics systems that require switching at high frequencies.

The IHW20N135R5XKSA1 transistor works by allowing current to flow through it either forwards or in reverse, depending on the voltage applied across its gate and collector regions. When a positive voltage is applied to the gate and collector regions, a current flows from the collector to the emitter region. This current flow creates a low resistance between the collector and emitter regions and allows current to flow freely. However, when a negative voltage is applied to the gate and collector regions, the current is blocked and a high resistance is created between the two regions, preventing current flow.

The IHW20N135R5XKSA1 transistor is a great choice for a variety of power management applications that require fast switching and a reliable solution. It can be used in home appliances, industrial machinery, power electronics, and many other applications. The combination of its low on-resistance and high junction temperature, as well as its fast switching speed makes it an ideal solution for high-frequency power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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