IHW20N135R3FKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IHW20N135R3FKSA1 IGBT is a kind of single transistor IGBT that is used when switching currents in medium to high-power applications. This type of IGBT features integrated fast diodes, low saturation voltage, and minimal delay times. Furthermore, the IHW20N135R3FKSA1 IGBT is suitable for both high voltage and high frequency operation. In this article, we\'ll be discussing both the application field and the working principle of the IHW20N135R3FKSA1 IGBT.

Application Field of the IHW20N135R3FKSA1 IGBT

The IHW20N135R3FKSA1 transistor is a type of high-power IGBT that is suitable for high voltage and high frequency applications. As such, this transistor is most often used in applications that require a heavy load of current to be switched. This includes applications such as motor drives, high-speed motion controllers, AC/DC converters, welding, and other industrial machinery. Additionally, this transistor is also used in motor control in high power industries such as HVAC, power plants, and telecom.

The IHW20N135R3FKSA1 transistor is also suitable for applications such as DC/DC converters, digital signal processors, solar inverters, and harmonic filters. This IGBT is also capable of working at both high voltage and high frequency operation and is ideal for applications that require either high voltage and/or high frequency operation.

Working Principle of the IHW20N135R3FKSA1 IGBT

The IHW20N135R3FKSA1 transistor is designed to work as a low voltage and high IGBT (Insulated Gate Bipolar Transistor). This type of transistor consists of a semiconductor gate that is insulated from the main conduction channel (base). This allows the gate to be controlled while the main conduction channel remains unaffected. When the gate is driven by a low voltage (normally 5V), the main conduction channel allows the current to flow.

In addition to allowing for low voltage and high frequency operation, the IHW20N135R3FKSA1 transistor also allows for very fast switching times with minimal switching loss. This is because the IGBT has an integrated fast diode that allows for fast and efficient switching. Furthermore, this IGBT also has a low saturation voltage which means that the transistor can switch faster with less power dissipation.

In conclusion, the IHW20N135R3FKSA1 IGBT is a single transistor IGBT that is designed to switch currents in medium to high-power applications. This type of IGBT is suitable for applications that require both high voltage and high frequency operation. Furthermore, the IHW20N135R3FKSA1 IGBT has an integrated fast diode and a low saturation voltage, which allows for efficient and fast switching. As such, this type of IGBT is well suited for applications such as motor drives, high-speed motion controllers, AC/DC converters, welding, and other industrial machinery.

The specific data is subject to PDF, and the above content is for reference