IHW20N65R5XKSA1 Allicdata Electronics
Allicdata Part #:

IHW20N65R5XKSA1-ND

Manufacturer Part#:

IHW20N65R5XKSA1

Price: $ 2.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V 40A 150W TO247
More Detail: IGBT 650V 40A 150W Through Hole PG-TO247-3
DataSheet: IHW20N65R5XKSA1 datasheetIHW20N65R5XKSA1 Datasheet/PDF
Quantity: 135
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.07270
10 +: $ 1.86417
100 +: $ 1.52725
500 +: $ 1.30015
1000 +: $ 1.09650
Stock 135Can Ship Immediately
$ 2.28
Specifications
Series: TrenchStop®
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 150W
Switching Energy: 300µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 97nC
Td (on/off) @ 25°C: 24ns/250ns
Test Condition: 400V, 10A, 20 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Description

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The IHW20N65R5XKSA1 is a TO-247 packaged MOS power transistor, which belongs to the family of insulated gate bipolar transistors (IGBTs) with a single emitter. It is an efficient device that is configured to allow current to flow directly between collector and emitter and can be used in high power applications due to its excellent switching capabilities and low switching losses. The device is capable of delivering continuous current of up to 20 A and peak collector-emitter voltage of 650 V.

Application Fields

The IHW20N65R5XKSA1 IGBT can be used in a variety of power electronic applications, such as motor control, uninterruptible power supplies, power supplies, energy conversion and consumer electronics. Its single emitter design makes it ideal for higher power switching applications, such as converters, inverters, and brushless DC motors.

Working Principle

At present, the IHW20N65R5XKSA1 operates as an insulated gate bipolar transistor (IGBT). The device has an insulated gate that allows it to be turned on or off with minimal power consumption. When the gate voltage is greater than the threshold voltage, the device is in the ‘on’ or active state. This allows current to flow between collector and emitter. When gate voltage falls to below the threshold, the device is switched ‘off’, preventing current flow through the device.

The IHW20N65R5XKSA1 features both low switching losses and long service life, as it operates as a normally open switch when the gate voltage is below the threshold, and as a normally closed switch when the gate voltage is above the threshold. This allows for highly efficient operation in both directions, preserving energy and extending operating life.

Conclusion

The IHW20N65R5XKSA1 is a very versatile power transistor designed for applications that demand high current handling capabilities and require low switching losses. Its single emitter design makes it ideal for a wide range of power electronic applications, from motor controls and uninterruptible power supplies to consumer electronics. It boasts excellent switching characteristics, allowing for energy efficient operation in both directions and extended service life.

The specific data is subject to PDF, and the above content is for reference

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