IHW25N120E1XKSA1 Allicdata Electronics
Allicdata Part #:

IHW25N120E1XKSA1-ND

Manufacturer Part#:

IHW25N120E1XKSA1

Price: $ 2.66
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT NPT/TRENCH 1200V 50A TO247
More Detail: IGBT NPT and Trench 1200V 50A 231W Through Hole PG...
DataSheet: IHW25N120E1XKSA1 datasheetIHW25N120E1XKSA1 Datasheet/PDF
Quantity: 74
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.41920
10 +: $ 2.17161
100 +: $ 1.77918
500 +: $ 1.51460
1000 +: $ 1.27737
Stock 74Can Ship Immediately
$ 2.66
Specifications
Power - Max: 231W
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 147nC
Input Type: Standard
Switching Energy: 800µJ (off)
Series: TrenchStop™
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Current - Collector Pulsed (Icm): 75A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT and Trench
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IHW25N120E1XKSA1 is a type of insulated-gate bipolar transistors (IGBTs) that is most commonly used in industry and research applications. It is a single type device, meaning it has only one “gate”. The IHW25N120E1XKSA1 is an N channel device, meaning that it is mainly used for switching and rectifier applications. It is a high power device capable of providing up to 1200V of blocking voltage, providing great performance and efficiency.

The working principle of the IHW25N120E1XKSA1 is based on the principle of bipolar transistor amplification. It uses a single gate to control the current flow in an N channel device. The gate voltage of the device is used to control the polarity of the voltage applied to the collector base junction. When the gate voltage is increased, the base current is increased and the collector-base junction becomes forward biased. This allows current to flow from the collector to the emitter, activating the device.

The IHW25N120E1XKSA1 is commonly used in industrial and research applications. It is a great device for switching and rectifier components. Its high blocking voltage capabilities provide great performance and efficiency. It is also often used in motor control, as it provides great performance in both low and high power switching applications. It is also commonly used in power electronics, particularly in high power inverters and converters.

The IHW25N120E1XKSA1 is a great choice for a variety of applications, due to its large blocking voltage and great performance. It is an excellent choice for motor control and power electronics applications, as its high blocking voltage capabilities allow it to handle higher voltages and currents. Its single gate design also makes it a great choice for low power applications, as it can easily be integrated into a circuit and requires minimal circuit design.

Overall, the IHW25N120E1XKSA1 is an excellent choice for a wide range of applications. With its high voltage capability, great performance and efficiency, it is sure to be a great choice for many different uses. Its single gate design makes it a great choice for both high and low power applications, as well as in motor control and power electronics applications. With its great features, the IHW25N120E1XKSA1 is sure to be a great choice for any application.

The specific data is subject to PDF, and the above content is for reference

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