IHW25N120R2FKSA1 Allicdata Electronics

IHW25N120R2FKSA1 Discrete Semiconductor Products

Allicdata Part #:

IHW25N120R2FKSA1-ND

Manufacturer Part#:

IHW25N120R2FKSA1

Price: $ 3.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 50A 365W TO247-3
More Detail: IGBT NPT 1200V 50A 365W Through Hole PG-TO247-3
DataSheet: IHW25N120R2FKSA1 datasheetIHW25N120R2FKSA1 Datasheet/PDF
Quantity: 135
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 3.00000
10 +: $ 2.91000
100 +: $ 2.85000
1000 +: $ 2.79000
10000 +: $ 2.70000
Stock 135Can Ship Immediately
$ 3
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Power - Max: 365W
Switching Energy: 1.59mJ
Input Type: Standard
Gate Charge: 60.7nC
Td (on/off) @ 25°C: -/324ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Description

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Introduction to IHW25N120R2FKSA1

The IHW25N120R2FKSA1 is a Power Module designed for easy use by any engineer, providing low and medium power switching. It is a Single IGBT that provides up to 1200V of Voltage and a maximum blocking voltage of 2500V. The IHW25N120R2FKSA1 also features a low switching threshold voltage, typically 3V, and a current rating of up to 25A.

Application Field

The IHW25N120R2FKSA1 is suitable for much commercial and industrial usage. One specific example is its usage in lighting systems, especially for high-power output and brightness. With its high voltage capability, the module is also suitable for many smart and connected applications like renewable energy and motors. Other public sector applications are telecommunications and medical systems, for which the module can provide high power output in an economical manner.

Working Principle

The IHW25N120R2FKSA1 is a single IGBT, meaning it consists of two transistors, an Insulated Gate Bipolar Transistor (IGBT) and a diode. The two transistors and the diode form a three-terminal device that acts as a voltage regulator by controlling the flow of electric current in three directions. In particular, it controls the flow of current from the emitter to the collector and from the emitter to the gate, as well as the flow of current into the gate. Since the device allows current to be controlled in both directions, it is able to perform the important functions of switching, linear control, and protection.

When the gate of the IHW25N120R2FKSA1 is enabled, a high voltage is applied to the gate-collector junction, which switches on the device by causing the current to flow from the emitter to the collector. The current is then controlled at the gate, allowing for linear control of the current output. The diode also helps provide protection from large voltage transients, which may occur in some applications. In summary, the IHW25N120R2FKSA1 is designed for the most efficient and safe control of power.

Conclusion

The IHW25N120R2FKSA1 is a single IGBT device designed for commercial and industrial applications, such as lighting systems and smart and connected applications like renewable energy and motors. It provides up to 1200V of voltage and a maximum blocking voltage of 2500V. The module also features a low switching threshold voltage, typically 3V, and a current rating of up to 25A. It is an easy-to-use device that is able to perform the important functions of switching, linear control, and protection thanks to its two transistors and a diode.

The specific data is subject to PDF, and the above content is for reference

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