IKD10N60RAATMA2

Series:	TrenchStop®
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	20A
Current - Collector Pulsed (Icm):	30A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 10A
Power - Max:	150W
Switching Energy:	--
Input Type:	Standard
Gate Charge:	64nC
Td (on/off) @ 25°C:	14ns/192ns
Test Condition:	400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr):	62ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Base Part Number:	*KD10N60

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IntroductionThe IKD10N60RAATMA2 is a single IGBT (Insulated Gate Bipolar Transistor) and is a type of power transistor used in modern electronics. It is produced by Infineon, a German semiconductor manufacturer. This IGBT has a wide variety of applications in the industrial, consumer, and transportation markets. It is used to drive motors, control various power electronics circuits, and is commonly found in automotive and other power-sensitive applications.Device CharacteristicsThe IKD10N60RAATMA2 is a first generation IGBT and is made using the latest epi-planar MOS process. It has a low gate charge (QG) of 16nC and a low gate threshold voltage of 4V. It has a low on-state saturation voltage (Vcesat) of 4V. It also has a large on-state current handling capability of up to 10A (nominal). Moreover, the IKD10N60RAATMA2 has a maximum junction temperature of 175°C and is RoHS-compliant. Application FieldThe IKD10N60RAATMA2 is suitable for use in many applications due to its low gate charge, low on-state resistance and high current saturation. It is especially suitable for switching applications such as motor control, DC-AC Inverter, and DC-DC converter, as it has a low turn-on and turn-off time. Over current protection, EMI suppression and active energy conditioning can also be achieved with the IKD10N60RAATMA2. It is also widely used in automotive applications such as engine control modules, hybrid vehicles, fuel cell vehicles, and in consumer electronics, industrial automation and other power controlled systems.Working PrincipleThe IKD10N60RAATMA2 is a Uni-Polar, multi-emitter IGBT. It is designed to provide fast switching with low power loss. This device consists of two main parts, the Gate electrode and the Drift region.When a positive voltage is applied to the gate, electrons are attracted towards the gate electrode and is deposited on the surface. These electrons create an electron depletion region in the drift region that effectively cuts off current flow in the opposite direction. This is known as turn-on.When the voltage at the gate is reversed, the electrons on the gate electrode are pushed away and the depletion region disappears. This allows current flow to take place in the same direction and is known as turn-off.This device also has a fast recovery diodes built in the Drift region. This feature provides a faster switching time and helps to minimize power loss.ConclusionThe IKD10N60RAATMA2 is a single IGBT that is suitable for a wide range of applications. It has a low gate charge, low on-state resistance and high current saturation, making it an excellent choice for motor control, DC-AC inverter and DC-DC converter applications. Furthermore, this device has a fast recovery diodes built in the drift region, which provides faster switching time and minimizes power loss.

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