Allicdata Part #: | IKD15N60RAATMA1TR-ND |
Manufacturer Part#: |
IKD15N60RAATMA1 |
Price: | $ 0.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 30A 250W TO252-3 |
More Detail: | IGBT Trench 600V 30A 250W Surface Mount PG-TO252-3 |
DataSheet: | IKD15N60RAATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
2500 +: | $ 0.73853 |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Power - Max: | 250W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 90nC |
Td (on/off) @ 25°C: | 16ns/183ns |
Test Condition: | 400V, 15A, 15 Ohm, 15V |
Reverse Recovery Time (trr): | 110ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Base Part Number: | *KD15N60 |
Series: | TrenchStop® |
Packaging: | Tape & Reel (TR) |
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The IKD15N60RAATMA1 is a transistor made by Infineon Technologies and is a part of the company’s IGBT (Insulated-Gate Bipolar Transistors) family. This particular IGBT device is a single version, meaning it is made to serve a single electronic component or device. The IKD15N60RAATMA1 is capable of drawing a maximum of 150A and can sustain a drain-source voltage of 600V. The transistor has a short-circuit commutation ruggedness and a low-inductive package that make it perfect for high-frequency switching applications.
The IKD15N60RAATMA1 is most commonly used in high-frequency transistor inverters and motor control systems, as well as for switching information in high-speed communications networks. It is also often used in UPS systems, as an input and output stabilizer, or as a power control module. With its low power consumption design and efficiency, it can also be used in power factor correction (PFC) products.
The IKD15N60RAATMA1 offers a number of advantages such as superior performance, high speed, low losses, and ease of use. It is also highly reliable and has a long-term functioning despite its small size. As a result, the IKD15N60RAATMA1 is a great choice for many applications that require a fast switching device.
The IKD15N60RAATMA1 works on the principle of an insulated-gate bipolar transistor (IGBT). An IGBT is a type of semiconductor device that combines the best features of both a low power MOSFET (metal-oxide semiconductor field effect transistor) and a bipolar junction transistor (BJT). Like a MOSFET, an IGBT has a low gate input resistance and hence high speed switching. Like a BJT, it has high voltage gain, lower operating and saturation voltages, and higher currents. In essence, an IGBT is the best combination of the two types of transistors, giving it a much higher performance than either one alone.
When an IGBT is used to switch an electrical load, a high voltage is connected to the drain and the source. When a current flows between the two, the insulated gate is used to control whether or not current is allowed to pass. When the IGBT gate is open, the current flows freely, allowing the load to be operated. When the IGBT gate is closed, the current is blocked, preventing the load from operating. This is known as switching the device on or off.
As the IKD15N60RAATMA1 is a single device, it can be used to switch one or more DC or AC electrical loads. It can also be used as a controller in complex switching applications such as motor control systems, inverters, and UPS systems. Additionally, the IKD15N60RAATMA1 offers a low power consumption design, which makes it a great choice for power factor correction (PFC) products.
Altogether, the IKD15N60RAATMA1 is a great choice for any application that requires a fast switching device with a long-term endurance and a high performance. With its low power consumption design, it can also be used in a variety of power control techniques, making it a versatile and reliable choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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