IKD10N60RFAATMA1

Series:	Automotive, AEC-Q101, TrenchStop™
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	20A
Current - Collector Pulsed (Icm):	30A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 10A
Power - Max:	150W
Switching Energy:	190µJ (on), 160µJ (off)
Input Type:	Standard
Gate Charge:	64nC
Td (on/off) @ 25°C:	12ns/168ns
Test Condition:	400V, 10A, 26 Ohm, 15V
Reverse Recovery Time (trr):	72ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3

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Introduction

The IKD10N60RFAATMA1 (also known as 10N60) is a high voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Fuji Electric. This device is intended for use in switching applications such as electric motor drive. In this article, I will give a brief overview of the 10N60 including its application fields and the principles governing its operation.

Application Fields

The 10N60 is a high voltage, low on-state resistance, NPT type IGBT that is suitable for a variety of applications. It is mainly used for medium and high power switching devices in motor, air conditioning, home appliance, and electric vehicle applications. Additionally, as the trend for lighter and smaller products continues, the 10N60 is ideal for applications that require a small package size and high power density.

Working Principle

The 10N60 is a 3-terminal power semiconductor device consisting of an n-p-n power transistor, a gate control unit, and an built-in diode. The device is configured such that when the gate voltage is greater than or equal to the turn-on threshold voltage, the device switches from an open to a closed state. This allows current to flow through the device which in turn controls the applications motors or power components.The gate control unit of the 10N60 is a two-parameter control unit. This means it has two separate parameters that control the operation of the device: gate voltage and gate-emitter voltage. The gate voltage controls the turn-on and turn-off of the device while the gate-emitter voltage controls the device’s gain and saturation voltage. These parameters are adjusted through the control circuit of the application device connected to the 10N60.

Conclusion

The Fuji 10N60 is a high voltage NPT type IGBT suitable for a variety of switching applications such as electric motor drive. It has a low on-state resistance and a small package size that make it ideal for high power density applications. The device operates based on a two-parameter control unit consisting of gate voltage and gate-emitter voltage which are adjusted through the control circuit of the application device. With its wide range of applications and its ability to control both AC and DC motors, the 10N60 is an essential component in a variety of power switching applications.

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