IKD10N60RFATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKD10N60RFATMA1TR-ND |
Manufacturer Part#: |
IKD10N60RFATMA1 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 20A 150W PG-TO252-3 |
More Detail: | IGBT Trench Field Stop 600V 20A 150W Surface Mount... |
DataSheet: | IKD10N60RFATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
2500 +: | $ 0.49840 |
5000 +: | $ 0.49224 |
Series: | TrenchStop® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 20A |
Current - Collector Pulsed (Icm): | 30A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 10A |
Power - Max: | 150W |
Switching Energy: | 190µJ (on), 160µJ (off) |
Input Type: | Standard |
Gate Charge: | 64nC |
Td (on/off) @ 25°C: | 12ns/168ns |
Test Condition: | 400V, 10A, 26 Ohm, 15V |
Reverse Recovery Time (trr): | 72ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Base Part Number: | *KD10N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKD10N60RFATMA1 is a state-of-the-art IGBT, a type of transistor. IGBTs are a type of semiconductor device that allows electricity to flow through a circuit in one direction, preventing it from flowing back, and can be used to control the flow of electricity in a wide range of applications. The IKD10N60RFATMA1 is a single IGBT, meaning it contains one gate, three terminals and a single semiconductor layer.
The IKD10N60RFATMA1 has several notable features, including a maximum temperature of 150C, a maximum voltage of 600 V, and an optimized chip design that ensures high reliability and low power loss. It also has a relatively low on-state voltage drop, high output current and a wide enable voltage range. These features make it suitable for a wide range of applications, including power converters, motor control and power conditioning.
As with all IGBTs, the IKD10N60RFATMA1 works by combining the properties of a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor. When a voltage is applied to the gate of the IGBT, a region of electron depletion is created, allowing current to flow between the source and drain. This current can then be controlled by varying the gate voltage, making the IGBT useful for switching and controlling power.
The IKD10N60RFATMA1 is well-suited to applications such as motor control, power converters, switching power supplies and uninterruptible power supplies, as it requires lower voltage to turn on than most other power transistors, reducing the amount of power dissipation. It is also suitable for medium-power applications, as it can handle currents up to 600 V and its low on-state voltage drop reduces the need for heat-sinking.
In addition to its technical features, the IKD10N60RFATMA1 is also highly reliable and safe. It features short-circuit protection, over-temperature protection and over-voltage protection, ensuring that it can operate safely in a wide variety of applications. Its compact design also makes it easy to install, simplifying the design and construction of systems.
The IKD10N60RFATMA1 is an important device that can be used in many applications, from motor control and power conditioning to switching and power conversion. Its combination of high performance, wide enable voltage range and high reliability make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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