IKD15N60RFATMA1 Discrete Semiconductor Products

Series:	TrenchStop®
Packaging:	Cut Tape (CT)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	30A
Current - Collector Pulsed (Icm):	45A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 15A
Power - Max:	250W
Switching Energy:	270µJ (on), 250µJ (off)
Input Type:	Standard
Gate Charge:	90nC
Td (on/off) @ 25°C:	13ns/160ns
Test Condition:	400V, 15A, 15 Ohm, 15V
Reverse Recovery Time (trr):	74ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Base Part Number:	*KD15N60

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I K D15N60RFATMA1 Application Field and Working Principle

The I K D15N60RFATMA1 is a single insulated gate bipolar transistor (IGBT) with gate, emitter, collector and substrate connections. It is typically used for various power switching applications. The I K D15N60RFATMA1 has low on-state drop and high on-state current with full reverse voltage blocking capability. It also features high frequency switching and low switching losses. The I K D15N60RFATMA1 has a Maximum Junction Temperature of 150°C and a maximum Thermal Resistance of 1.3°C/W. The transistor has a maximum Drain-Source Voltage resistance of 600V, a maximum Gate-Source Voltage of 20V and a maximum Drain Source On-State Resistance of 0.86Ω. The I K D15N60RFATMA1 has a current rating of 15A. The I K D15N60RFATMA1 is ideal for use in semiconductor applications, such as motor drives, AC/DC inverter and energy management systems. It is also suited for power supplies, lighting, audio amplifiers and UPS systems. The I K D15N60RFATMA1 is a low operating temperature and low power consumption transistor. The operating temperature range of -55°C to 150°C ensures reliable performance over the wide temperature range. The low power consumption makes the IKD15N60RFATMA1 an energy-efficient device.The working principle of the IKD15N60RFATMA1 is based on the principle of current control replacement of voltage control. This process involves the use of an insulated gate in order to switch the transistor to conduct current in order to control the transfer of power. When the gate voltage is applied to the transistor, the gate-source voltage increases, resulting in a decrease in the on-state resistance. This causes a decrease in the drain-source voltage, resulting in a higher current flow.The device features a number of important features. It has a soft-switching and commutation capability, allowing for a smooth transition between the on and off states of the transistor. It also has low switching loss and conduction losses, allowing for high efficiency in operation. It also has a high switching speed which allows for fast switching operations. In conclusion, the IKD15N60RFATMA1 is a powerful and efficient single insulated gate bipolar transistor that is suited for a wide range of power applications. It has low on-state voltage drop and a high on-state current rating, as well as excellent reverse voltage blocking capability. The IKD15N60RFATMA1 is an energy-efficient device that features a low operating temperature and low power consumption. Its high-frequency switching and low switching losses make it an ideal choice for a wide range of switching applications.

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