Allicdata Part #: | IKD15N60RFAATMA1-ND |
Manufacturer Part#: |
IKD15N60RFAATMA1 |
Price: | $ 0.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 30A 250W PG-TO252-3 |
More Detail: | IGBT Trench 600V 30A 240W Surface Mount PG-TO252-3 |
DataSheet: | IKD15N60RFAATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
2500 +: | $ 0.70210 |
Series: | Automotive, AEC-Q101, TrenchStop™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 15A |
Power - Max: | 240W |
Switching Energy: | 270µJ (on), 250µJ (off) |
Input Type: | Standard |
Gate Charge: | 90nC |
Td (on/off) @ 25°C: | 13ns/160ns |
Test Condition: | 400V, 15A, 15 Ohm, 15V |
Reverse Recovery Time (trr): | 74ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
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The IKD15N60RFAATMA1 is a single IGBT with an extra fast-switching transistor. Manufactured by IXYS Corporation, the IKD15N60RFAATMA1 is mainly used in applications where ultra-high switching speeds are required.
Application Field of IKD15N60RFAATMA1
The IKD15N60RFAATMA1 is mainly used in power conversion, motor control, and inverter applications. It is used in high-power applications such as UPS, welding machines, induction heating, and in PFC (Power Factor Correction) circuits. Additionally, this IGBT can be used in high-efficiency applications thanks to its low on-state voltage and losses.
Working Principle of IKD15N60RFAATMA1
An insulated gate bipolar transistor, or IGBT, is a three-terminal device which combines the advantages of a MOSFET with those of a BJT. It acts as a power switch, with a gate voltage controlling the device\'s current carrying capabilities. IGBTs can be used in high-power applications with low switching losses thanks to their low on-state voltage. The IKD15N60RFAATMA1 is rated for +600 V and 15 A, meaning it can be used for high-power applications. Furthermore, its ultra-fast switching speeds allow it to be used in applications with high switching frequencies.
Conclusion
The IKD15N60RFAATMA1 is a single IGBT which is used in applications which require ultra-fast switching speeds. It is mainly used in high-power applications such as UPS and welding machines, and in power conversion, motor control, and inverter applications. The IKD15N60RFAATMA1 is rated for +600 V and 15 A, and has a low on-state voltage and losses, making it suitable for high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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