IPA90R340C3XKSA1

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IPA90R340C3XKSA1 is a single N-channel, Enhancement Mode, Vertical DMOS FET. It is designed to support high voltage and drain current levels of up to 340 A (H2PAK package) in a small area with extremely low gate charge and minimal capacitance. The device is particularly suitable for automotive applications, such as motor control, power door locks and seat adjusters.

An N-channel MOSFET is a type of transistor that typically consists of three terminals: the source (S), the drain (D), and the gate (G). N-channel MOSFETs are used because the majority of the current flows from the source to the drain. The amount of current flow is controlled by the voltage applied to the gate. When a voltage is applied to the gate, a field is created and the current flows. The higher the gate voltage, the greater the current flow. In this way, the MOSFET acts like a controllable switch.

The IPA90R340C3XKSA1 has high electrical performance, with a on-resistance of 2.3 mΩ, a breakdown voltage of 200 V, and a maximum drain-source voltage of 600 V. The device can handle up to 340 A, with a gate-drain capacitance of less than 1.8 pF.

Another advantage of the device is its low gate charge. This low gate charge means that the device is able to switch quickly and efficiently. For applications that require high switching speed, such as motor control and solenoid actuators, the low gate charge is an invaluable feature.

The device is also extremely robust, with a maximum junction temperature of 125 °C, and it has a high immunity to electrostatic discharge (up to 4kV). This makes it suitable for automotive applications, which need to pass stringent safety tests.

In conclusion, the IPA90R340C3XKSA1 is a high-performance single N-channel Enhancement Mode Vertical DMOS FET designed to support high voltage and drain current levels in automotive applications. It has a low gate charge and high immunity to electrostatic discharge, making it suitable for use in harsh environments.

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