| Allicdata Part #: | IPB35N10S3L26ATMA1-ND |
| Manufacturer Part#: |
IPB35N10S3L26ATMA1 |
| Price: | $ 0.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH TO263-3 |
| More Detail: | N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount D²P... |
| DataSheet: |  IPB35N10S3L26ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.48926 |
| Vgs(th) (Max) @ Id: | 2.4V @ 39µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 71W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 26.3 mOhm @ 35A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IPB35N10S3L26ATMA1 is a N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device. This device is optimized for high frequency power applications, such as high speed switching, radio frequency (RF) power amplifiers, and high frequency power converters. It is commonly used in high frequency and high current applications due to its low ON-resistance and low gate charge.
The working principle of the IPB35N10S3L26ATMA1 is similar to that of a standard metal-oxide-semiconductor field-effect transistor (MOSFET). It operates in enhancement mode, and consists of source, drain, gate electrodes and a channel that conducts current when the gate voltage is higher than a certain threshold voltage, VGSth.
The device consists of two layers, the gate oxide layer and the channel layer. The gate oxide layer insulation is such that the gate voltage of the device controls the current through the channel layer, thus providing a low resistance path for current when the gate voltage is either higher or lower than the threshold voltage. By varying the gate voltage, the current conducted can be varied accordingly.
The IPB35N10S3L26ATMA1 has a wide range of applications, as it is optimized for high frequency power applications. It is typically used in high speed switching, radio frequency (RF) power amplifiers, and high frequency power converters. It can also be used in power supplies, load switching and motor control circuits.
The IPB35N10S3L26ATMA1 offers excellent switching characteristics, with a low on-resistance and low gate charge, making it ideal for high frequency and high current applications. It also has high noise immunity and can be used in high-temperature operating environments.
In conclusion, the IPB35N10S3L26ATMA1 is an N-channel Enhancement Mode MOSFET device which is optimized for high frequency power applications, such as high speed switching, radio frequency (RF) power amplifiers, and high frequency power converters. It has a wide range of applications due to its low on-resistance and low gate charge, making it ideal for high frequency and high current applications.
The specific data is subject to PDF, and the above content is for reference
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